| PART |
Description |
Maker |
| T7300135 T7300145 T7300155 T7300235 T7300245 T7300 |
Phase Control SCR (350-550 Amperes Avg 100-2200 Volts) 第一阶段控制晶闸管（350-550安培平均100-2200伏特
|
Powerex Power Semicondu...
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| DN3135N8-G |
N-Channel Depletion-Mode Vertical DMOS FETs 135 mA, 350 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243AA
|
Supertex, Inc.
|
| TC1550TG-G |
N- and P-Channel Enhancement-Mode Dual MOSFET 350 A, 500 V, 60 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Supertex, Inc.
|
| NX3008NBKW NX3008NBKW-15 |
30 V, 350 mA N-channel Trench MOSFET
|
NXP Semiconductors
|
| NGD8205N |
Ignition IGBT, N-Channel, 20 A, 350 V, DPAK
|
ON Semiconductor
|
| NGB8206NT4 NGB8206NT4G NGB8206NG NGB8206N |
Ignition IGBT 20 A, 350 V, N−Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
| IRF721 |
3.3 A, 350 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
|
STMICROELECTRONICS
|
| CPC3730CTR |
0.14 A, 350 V, 30 ohm, N-CHANNEL, Si, POWER, MOSFET ROHS COMPLIANT PACKAGE-3
|
Clare, Inc.
|
| MGP15N35CL-D |
Ignition IGBT 15 Amps, 350 Volts N-Channel TO-220 and D2PAK
|
ON Semiconductor
|
| FSL23A0R FSL23A0D FN4476 FSL23A0R4 FSL23A0D1 FSL23 |
6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
6A/ 200V/ 0.350 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| TAN350 |
350 Watts, 50 Volts, Pulsed Avionics 960 1215 MHz 350瓦，50伏特，脉冲航空电601215兆赫
TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 350; P(in) (W): 70; Gain (dB): 7; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
350 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz
|
Electronic Theatre Controls, Inc.
Microsemi, Corp.
ETC[ETC]
List of Unclassifed Manufacturers
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