| PART |
Description |
Maker |
| 5P1103 |
Four banks of internal non-volatile in-system
|
Integrated Device Techn...
|
| IS43R16400B |
Four internal banks for concurrent operation
|
Integrated Silicon Solution, Inc
|
| AS4C32M16MD1 AS4C32M16MD1-5BCN |
Four internal banks for concurrent operation
|
Alliance Semiconductor ...
|
| MT47H32M16HR-25E MT47H64M8CF-25EG |
DDR2 SDRAM MT47H128M4 ?32 Meg x 4 x 4 banks MT47H64M8 ?16 Meg x 8 x 4 banks MT47H32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
| MT48LC32M16A2P-75ITC |
SDR SDRAM MT48LC128M4A2 ?32 Meg x 4 x 4 banks MT48LC64M8A2 ?16 Meg x 8 x 4 banks MT48LC32M16A2 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
| MT41J256M8 MT41J128M16 MT41J128M16HA-15EDTR MT41J1 |
DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks
2Gb: x4, x8, x16 DDR3 SDRAM Features
DDR3 SDRAM MT41J512M4 ?64 Meg x 4 x 8 Banks MT41J256M8 ?32 Meg x 8 x 8 Banks MT41J128M16 ?16 Meg x 16 x 8 Banks
|
Micron Technology
|
| MT47H128M16RT-25EC MT47H128M16RT-25EITC MT47H256M8 |
DDR2 SDRAM MT47H512M4 ?64 Meg x 4 x 8 banks MT47H256M8 ?32 Meg x 8 x 8 banks MT47H128M16 ?16 Meg x 16 x 8 banks
2Gb: x4, x8, x16 DDR2 SDRAM Features
|
Micron Technology
|
| W981616AH W981616AHB1 |
512 x 2 Banks x 16 Bits SDRAM
512K x 2 BANKS x 16 BIT SDRAM
From old datasheet system
|
Winbond Electronics
|
| K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 72SD3232RPFE 72SD3232RPFI 72SD3232RPFK 72SD3232RPF |
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 32M X 32 SYNCHRONOUS DRAM, 6 ns, DFP72
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 1千兆位SDRAM2梅格× 32位4，银
|
http://
Maxwell Technologies, Inc
|
| 38721-7312 38721-7306 38721-7308 38721-7304 38721- |
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 72-5 2种方式结核病
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 72-5 8路结核病
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 72-8 12未来路结核病
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 72-8 10未来路结核病
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 72-8 6未来路结核病
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 72-8 2种方式结核病
25 A, BARRIER STRIP TERMINAL BLOCK, 1 ROW, 1 DECK
|
复位半导
Harwin PLC
Ironwood Electronics
MOLEX INC
|
| HY57V641620HGT-6 HY57V641620HGT-7 HY57V641620HGT-5 |
4 Banks x 1M x 16Bit Synchronous DRAM 4银行× 1米16位同步DRAM
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
