| PART |
Description |
Maker |
| TLWK1100BT11 TLWK1100B |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.34 to 14.98; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Panel Circuit Indicator
|
Toshiba Corporation
Toshiba Semiconductor
|
| TMP47P202VP TMP47P202VM |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 的CMOS 4位微控制
|
Toshiba Corporation
Toshiba, Corp.
|
| TMP47P422VN TMP47P422VF TMP47P422VU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 21.08; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 的CMOS 4位微控制
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.65 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 的CMOS 4位微控制
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 的CMOS 4位微控制
|
Toshiba, Corp.
|
| TMP86C407MG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 21.77; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
|
Toshiba Corporation
|
| TMP19A43FZXBG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 1.90 to 2.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 32位RISC微处理器
|
Toshiba, Corp.
|
| TMP47C103M |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.84 to 5.04; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 的CMOS 4位MICROCON
|
Toshiba, Corp.
|
| WP7104PGD |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 6.86 to 7.14; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
T-1 (3mm) SOLID STATE LAMP
|
Kingbright Corporation.
|
| 12CWQ03FNTR 12CWQ03FNPBF 12CWQ03FNTRL 12CWQ03FNTRL |
SCHOTTKY RECTIFIER 12 Amp 肖特基整流器12安培
Zener Diode; Application: Surge absorption; Pd (mW): 200; Vz (V): 6.47 to 7.0; Condition Iz at Vz (mA): 5; C (pF) max: 25; Condition VR at C (V): 0; ESD (kV) min: 20; Package: MPAK
|
International Rectifier, Corp.
|
| SKDH11507 SKDH115/12 |
Transistor; Type: Amplifiers/Bipolar; VCEO (V): 5; Ic (A): 0.5; hFE: 110 to 190; fT (GHz) typ: 10.5; Cob (pF) max: 2; Package: MPAK 1200 V, SCR
Half Controlled 3-phase Bridge Rectifier
|
Semikron International
|
| HVD369B |
Super small Flat Package (SFP) is suitable for surface mount design
|
TY Semiconductor Co., Ltd
|
| 1SMAF4728A |
Small plastic package suitable for surface mounted design
|
SHIKE Electronics
|
| MM3Z36 |
Small plastic package suitable for surface mounted
|
Bruckewell Technology L...
|
