| PART |
Description |
Maker |
| 1N4937G 1N4937GL 1N4936G 1N4936GL 1N4935G 1N4935GL |
TRANSISTOR NPN 45V SOT23 1 A, 600 V, SILICON, SIGNAL DIODE
1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE
1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE
|
Won-Top Electronics Co., Ltd.
Diodes, Inc.
DIODES[Diodes Incorporated]
|
| BYM11-50 BYM11-800 BYM11-600 BYM11-400 BYM11-100 B |
1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
Surface Mount Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A
|
Vishay Beyschlag
|
| JANS1N6663 |
Signal or Computer Diode; Package: B; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 600; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi, Corp.
|
| 10ELS6TA1B2 |
0.77 A, 600 V, SILICON, SIGNAL DIODE
|
NIHON INTER ELECTRONICS CORP
|
| RU2 |
1 A, 600 V, SILICON, SIGNAL DIODE
|
|
| ER1J-LTP |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA
|
MICRO COMMERCIAL COMPONENTS
|
| SF10JG |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 PLASTIC PACKAGE-2
|
Vishay Beyschlag
|
| ERA22-02 ERA22-06 |
0.5 A, 200 V, SILICON, SIGNAL DIODE
0.5 A, 600 V, SILICON, SIGNAL DIODE
|
FUJI ELECTRIC CO LTD
|
| RG2A AG01 |
1 A, 600 V, SILICON, SIGNAL DIODE
0.7 A, 400 V, SILICON, SIGNAL DIODE
|
|
|
