| PART |
Description |
Maker |
| IPW65R041CFD |
extremely low losses due to very low fom rdson qg and eoss
|
Infineon Technologies AG
|
| MKP1839 |
C-values 1000 pF - 10 μF, Voltage 160 - 630 VDC, Tolerances to 1%, Low losses, Low dielectric absorption, Low profile, AXIAL
|
Vishay
|
| Q62702-F1287 Q62702-F1240 BF840 BF841 |
NPN Silicon RF Transistors (Suitable for common emitter RF/ IF amplifiers Low collector-base capacitance due to contact shield diffusion)
NPN Silicon RF Transistors (Suitable for common emitter RF IF amplifiers Low collector-base capacitance due to contact shield diffusion)
From old datasheet system
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SSM3060VHE |
Ultra low forward voltage drop, low power losses
|
Pan Jit International Inc.
|
| SBT1545LSS |
Ultra low forward voltage drop, low power losses
|
Pan Jit International Inc.
|
| VT60M45C-M3 VT60M45CHM3 |
Low forward voltage drop, low power losses
|
Vishay Siliconix
|
| IRF6609TR1 |
Low Conduction Losses
|
International Rectifier
|
| HYG75P120D1S |
low switching losses
|
HY ELECTRONIC CORP.
|
| IGC89T170S8RM |
low switching losses
|
Infineon Technologies A...
|
| SIGC12T120E |
low turn-off losses
|
Infineon Technologies A...
|
| IRGB4059DPBF IRGB4059DPBF-15 |
Low Switching Losses
|
International Rectifier
|
| IRGB4060DPBF IRGB4060DPBF-15 |
Low Switching Losses
|
International Rectifier
|
