| PART |
Description |
Maker |
| FDZ291P06 FDZ291P |
P-Channel 1.5 V Specified PowerTrench? BGA MOSFET
P-Channel 1.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IS71V08F64GS08-7085AI IS71V08F64GS08-7085BI |
SPECIALTY MEMORY CIRCUIT, PBGA101 11 X 12 MM, BGA-101
SPECIALTY MEMORY CIRCUIT, PBGA73 8 X 11.60 MM, BGA-73
|
Integrated Silicon Solution, Inc.
|
| K7P401811M-HC160 K7P403611M-HC200 K7P403611M |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet
128K X 36 STANDARD SRAM, 2.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
|
Samsung Electronic
|
| TSC51C2XXX-12IB TSC51C2XXX-16IB TSC51C2XXX-A12IB T |
IC MAX 7000 CPLD 512 208-PQFP
IC MAX IIZ CPLD 570 LE 256-MBGA
IC MAX 7000 CPLD 512 256-FBGA
484-pin FineLine BGA RoHS Compliant: Yes
956-pin BGA RoHS Compliant: Yes
IC,FPGA,32470-CELL,CMOS,BGA,1020PIN,PLASTIC
FPGA Logic IC Logic Type:FPGA; No. of Macrocells:726; Package/Case:1020-BGA; Leaded Process Compatible:No; Number of Circuits:32;
IC,FPGA,4800-CELL,CMOS,BGA,484PIN,PLASTIC
IC,FPGA,10570-CELL,CMOS,BGA,672PIN,PLASTIC
IC,FPGA,14400-CELL,CMOS,BGA,780PIN,PLASTIC
No. of Macrocells:192; No. of Pins:68; Operating Temp. Max:85°C; Operating Temp. Min:0°C; Propagation Delay:7.5ns RoHS Compliant: Yes;
No. of Macrocells:192; No. of Pins:100; Operating Temp. Max:85°C; Operating Temp. Min:0°C; Propagation Delay:7.5ns RoHS Compliant: Yes;
No. of Macrocells:160; No. of Pins:84; Operating Temp. Max:70 C; Operating Temp. Min:0 C; Propagation Delay:10ns RoHS Compliant: Yes;
No. of Macrocells:440; No. of Pins:100; Operating Temp. Max:85°C; Operating Temp. Min:0°C; Propagation Delay:9ns RoHS Compliant: Yes;
8-BIT MICROCONTROLLER 8位微控制
IC MAX 7000 CPLD 128 100-PQFP 8位微控制
IC MAX 7000 CPLD 160 84-PLCC 8位微控制
|
TE Connectivity, Ltd.
Diodes, Inc.
Semtech, Corp.
|
| FDZ294N |
N-Channel 2.5V Specified PowerTrench® BGA MOSFET
N-CHANNEL 2.5 V SPECIFIED POWERTRENCH BGA MOSFET
|
Fairchild Semiconductor
|
| US115T US115TE US112 US112T US112E US211 US211E US |
Analog IC
Intel® LXT16726 DeMUX, 132-pin BGA, Tray
Intel® LXT16726 DeMUX, 142-pin BGA, Tray
|
|
| FW80321M600Q467 FW80321M400Q466 |
600 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
400 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
|
Intel, Corp.
|
| AT49BV160-90CI AT49BV161-70CI AT49BV161-90CI AT49B |
EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|48PIN|PLASTIC
EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|45PIN|PLASTIC 的EEPROM | FLASH动画| 1MX16/2MX8 |的CMOS | BGA封装| 45PIN |塑料
|
ATM Electronic, Corp.
|
| K7P401823B-HC650 K7P401823B-HC750 K7P403623B |
256K X 18 STANDARD SRAM, 6.5 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 7.5 ns, PBGA119 14 X 22 MM, BGA-119
128Kx36 & 256Kx18 SRAM
|
Samsung semiconductor
|
| W9864G2DB-7 |
BGA SDRAM
|
Winbond Electronics
|
| M5LV-512/256-10SAI M5LV-512/256-12SAC M5LV-256/160 |
EE PLD, 10 ns, PBGA352 BGA-352
EE PLD, 12 ns, PBGA352 BGA-352
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP160
EE PLD, 15 ns, PBGA352 BGA-352
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP144
EE PLD, 15 ns, PQFP160 PLASTIC, QFP-160
CONNECTOR ACCESSORY EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP100
EE PLD, 15 ns, PQFP100 TQFP-100
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP208
EE PLD, 12 ns, PQFP100 TQFP-100
EE PLD, 12 ns, PBGA256 BGA-256
|
Lattice Semiconductor, Corp.
LATTICE SEMICONDUCTOR CORP
|
|
