| PART |
Description |
Maker |
| STAR100011 CYIS1SM1000AA-HHCS |
1M Pixel Radiation Hard CMOS Image Sensor
|
Cypress Semiconductor
|
| CYIS1SM0250-AA CYIS1SM0250-EVAL CYIS1SM0250AA-HHC |
250K Pixel Radiation Hard CMOS Image Sensor
|
Cypress Semiconductor
|
| CYIS1SM0250-AA09 CYIS1SM0250-EVAL CYIS1SM0250AA-HH |
CYIS1SM0250-AA STAR250 250K Pixel Radiation Hard CMOS Image Sensor
|
Cypress Semiconductor
|
| CAT28F020 CAT28F020-12 CAT28F020-70 CAT28F020-90 C |
150 x 32 pixel format, LED Backlight available
128 x 64 pixel format, White LED backlight
128 x 64 pixel format, White and Yellow-Green backlight
2 Megabit CMOS Flash Memory 2兆位闪存的CMOS
High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-SOIC -55 to 125 2兆位闪存的CMOS
|
http://
CATALYST[Catalyst Semiconductor]
HIROSE ELECTRIC Co., Ltd.
TE Connectivity, Ltd.
|
| DS2760TA-025 DS2760T-025 DS2760EA-025 DS2760XA-025 |
High Precision Li-Ion Battery Monitor
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO16
128 x 128 pixel format, LED or EL Backlight available
122 x 32 pixel format, LED or EL Backlight available
|
http://
DALLAS SEMICONDUCTOR
|
| HS-2510RH 5962D9568601VPA HS9-2510RH-Q HS7-2510RH- |
Radiation Hardened High Slew Rate Operational Amplifier
Radiation Hardened High Slew Rate Operational Amplifier OP-AMP, 8000 uV OFFSET-MAX, 12 MHz BAND WIDTH, CDIP8
CAP TANT LOESR 330UF 10V 20% SMD
Radiation Hardened High Slew Rate
Operational Amplifier(抗辐射高输出电压转换速率、低偏置电流运算放大
|
Intersil, Corp.
Intersil Corporation
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HS-82C54RH HS1-82C54RH HS1-82C54RH-8 HS1-82C54RH-Q |
From old datasheet system
Radiation Hardened CMOS Programmable Interval Timer
Radiation Hardened CMOS RProgrammable Interval TimerS
|
INTERSIL[Intersil Corporation]
|
| 5962F0152101QXC 5962F0152101VXC ISL74422ARHQF ISL7 |
Radiation Hardened 9A, Non-Inverting Power MOSFET Drivers BUF OR INV BASED MOSFET DRIVER, CDFP16
Radiation Hardened 9A. Non-Inverting Power MOSFET Drivers 辐射加固9A条。非反向功率MOSFET驱动
Power MOSFET Drivers, Rad-Hard, 9A, Non-Inverting
Radiation Hardened 9A/ Non-Inverting Power MOSFET Drivers
|
Intersil, Corp.
Intersil Corporation
|
