| PART |
Description |
Maker |
| KI4558DY |
PIN Configuration Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
| KI5902DC |
Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
| SI9410DY |
VDS (V) = 30V ID = 7 A (VGS = 10V) RDS(ON) 0.03 (VGS = 10V)
|
TY Semiconductor Co., L...
|
| SI2300 |
VDS=20V,RDS(ON)=40m VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m
|
TY Semiconductor Co., Ltd
|
| ST24W01 ST24W01B1TR ST24W01B3TR ST24W01B5TR ST24W0 |
128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
Cyclone FPGA 6K PQFP-240 I2C串行EEPROM
MOSFET, N POWERPAKMOSFET, N POWERPAK; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:PowerPak SO-8; Current, Id cont:6.5A; Current, Idm pulse:40A; Power, Pd:1.5W; Resistance, Rds on:0.015R; SMD:1; 1000串行EEPROM128 × 8
MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:PowerPak SO-8; Current, Id cont:11A; Current, Idm pulse:40A; Power, Pd:1.9W; Resistance, Rds on:15R; SMD:1; Charge, gate 000串行EEPROM28 × 8
IC FLEX 10K AKA FPGA I2C串行EEPROM
SERIAL 1K 128 x 8 EEPROM 000串行EEPROM28 × 8
Stratix GX FPGA 10K 4-FBGA
IC FLEX 10KA FPGA
IC FLEX 6000 FPGA 24K 208-PQFP
IC APEX 20KE FPGA 200K
IC FLEX 10KB FPGA 100K
IC APEX 20KE FPGA 400K
(ST2xxx) SERIAL 1K 128 x 8 EEPROM
From old datasheet system
SERIAL 1K (128 x 8) EEPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
|
| RSS-093.3 RSS050P03 RSS100N03 RSS130N03 RSS065N03 |
Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:25-20
Switching (30V / 5.0A)
Switching (30V / 10A)
Switching (30V / 13A)
Switching (30V / 6.5A)
Switching (30V / 9A)
ECONOLINE - DC/DC - CONVERTER ECONOLINE -直流/直流-转炉
|
RECOM Power Inc.
Rohm
RECOM Electronic GmbH
|
| ST7MDT2 ST7MDT2-110 ST7MDT2-220 ST7MDT2-DVP ST7MDT |
A Low-Cost Development Package Including A Full Real-Time Emulation Board(低价格开发软件包)
MDT2-DVP LOW COST ST7 DEVELOPMENT KIT DATASHEET
MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:51A; On-Resistance, Rds(on):0.36ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:6-TSOP; Drain-Source Breakdown Voltage:30V
From old datasheet system
MDT2-DVP LOW COST ST7 DEVELOPMENT KIT DATASHEET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| FST71100SM FST7135SM FST7160SM FST7180SM FST7120SM |
70A, 20V ultra fast recovery rectifier
70 Amp Rectifier 20 to 100 Volts Schottky Barrier
MOSFET; Transistor Polarity:N Channel; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
MOSFET, DUAL NN SO-8MOSFET, DUAL NN SO-8; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:7.5A; Current, Idm pulse:30A; Power, Pd:1.1W; Resistance, Rds on:0.022R; SMD:1;
|
MCC[Micro Commercial Components]
Micro Commercial Components Corp.
|
| FDMS9620S |
Dual N-Channel PowerTrench? MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ
Dual N-Channel PowerTrench㈢ MOSFET Q1: 30V, 16A, 21.5mヘ Q2: 30V, 18A, 13mヘ
|
Fairchild Semiconductor
|
| IRSF3021 |
FULLY PROTECTED POWER MOSFET SWITCH(Vds(50V), Rds(on)=200mohm)
|
IRF[International Rectifier]
|
| IRSF3010 |
FULLY PROTECTED POWER MOSFET SWITCH(Vds=50V, Rds(on)=80mohm)
|
IRF[International Rectifier]
|
| FDMS9620S |
Dual N-Channel PowerTrenchMOSFET Q1: 30V, 16A, 21.5mQ2: 30V, 18A, 13m
|
Fairchild Semiconductor Corporation
|
