| PART |
Description |
Maker |
| ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??)
High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五，10纳秒- 2微秒
HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp.
Semtech Corporation
|
| ISPLSI2128VE ISPLSI2128VE-100LB100 ISPLSI2128VE-10 |
3.3V In-System Programmable SuperFAST?High Density PLD
CRYSTAL 32.768KHZ 12.5PF SMD
3.3V In-System Programmable SuperFAST?/a> High Density PLD
3.3V In-System Programmable SuperFAST⑩ High Density PLD
3.3V In-System Programmable SuperFAST High Density PLD
CRYSTAL 12.0 MHZ 20PF SMD
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PBGA208
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 6 ns, PBGA208
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PBGA100
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PBGA100
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP160
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP100
3.3V In-System Programmable SuperFASTHigh Density PLD 3.3在系统可编程超快⑩高密度可编程逻辑器件
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
3.3V In-System Programmable SuperFAST?/a> High Density PLD
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| DM5374X-XXXX |
2.77mm Density Coaxial / High Voltage and High Power
|
Cinch
|
| DR127-2R2-R DR125-330-R DR125-560-R DR74-100-R DR7 |
High Power Density, High Efficiency, Shielded Inductors
|
Cooper Bussmann, Inc.
|
| ISPLSI2192VE-135LT128 ISPLSI2192VE-180-L-T128 ISPL |
3.3V In-System Programmable SuperFAST High Density PLD
3.3V In-System Programmable SuperFAST⑩ High Density PLD
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
RELAY SSR 110A 240VAC AC INPUT
3.3V In-System Programmable SuperFASTHigh Density PLD
|
LATTICE[Lattice Semiconductor]
LatticeSemiconductor
Lattice Semiconductor Corporation
|
| STW80N06-10 4868 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STP38N06 3645 |
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| SD20-XXX |
High Power Density
|
Cooper Electronic
|
| ISPLSI1032 ISPLSI1032-60LG_883 ISPLSI1032-80LJ ISP |
In-System Programmable High Density PLD EE PLD, 17 ns, PQCC84
High-Density Programmable Logic
|
Lattice Semiconductor, Corp.
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
|
