| PART |
Description |
Maker |
| 1N3163 1N3162 1N3174 1N3176 1N3166 1N3167 |
Diode Switching 150V 240A 2-Pin DO-9
Diode Switching 100V 240A 2-Pin DO-9
Diode Switching 1KV 300A 2-Pin DO-9
Diode Switching 1.4KV 240A 2-Pin DO-9
Diode Switching 300V 240A 2-Pin DO-9
Diode Switching 350V 240A 2-Pin DO-9
|
New Jersey Semiconductor
|
| MMBD4448HW-7-F |
Switching Diodes
SURFACE MOUNT SWITCHING DIODE 0.25 A, 80 V, SILICON, SIGNAL DIODE
|
Diodes, Inc.
|
| MMBD7000LT1 |
Dual Switching Diode
200mA Surface Mount Switching Diode-100V
|
WILLAS ELECTRONIC CORP
|
| CMLD2004 CMLD2004S CMLD2004A CMLD2004C CMLD2004DO |
SMD Switching Diode Dual: Common Cathode
SMD Switching Diode Dual: Opposing Polarity
SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES
|
CENTRAL[Central Semiconductor Corp]
|
| BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 1N6642 1N4305 1N4149 1N4449 1N4444 1N4447 1N6638 1 |
COMPUTER DIODE Switching
COMPUTER SWITCHING DIODE
200mA Low Power Switching
|
MICROSEMI CORP-LOWELL
MICROSEMI[Microsemi Corporation]
|
| Q62702-A1050 BAS16W |
Silicon Switching Diode (For high speed switching applications) 0.25 A, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Siemens Semiconductor Group
|
| CMPD2004S CMPD2003 CMPD2003C CMPD2003S CMPD2004 CM |
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE
SMD Switching Diode Dual: High Voltage: Common Anode
|
CENTRAL[Central Semiconductor Corp]
|
| CMPD7000E |
SMD Switching Diode Dual: In Series
ENHANCED SPECIFICATION SURFACE MOUNT DUAL, SILICON SWITCHING DIODE SERIES CONNECTION
|
Central Semiconductor Corp
|
| 1N3062 1N3064 1N3063 1N3062-15 |
SILICON SWITCHING DIODE 0.075 A, 75 V, SILICON, SIGNAL DIODE, DO-35
Leaded Silicon Diode Switching
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
Central Semiconductor C...
|
| BAS16 Q62702-F739 |
Silicon Switching Diode (For high-speed switching) 0.25 A, SILICON, SIGNAL DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q67040S4717 IKW30N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode 低损耗DuoPack：在IGBT的沟槽场终止技术和软，恢复快反平行何快恢复二极
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
