| PART |
Description |
Maker |
| MMBZ5250B |
Planar Die Construction
|
TY Semiconductor Co., Ltd
|
| UMC5N |
Epitaxial Planar Die Construction
|
TY Semiconductor Co., Ltd
|
| GBJ35005 |
Glass passivated die construction
|
Sangdest Microelectroni...
|
| MBR850 |
Guard Ring Die Construction for Transient Protection
|
Kersemi Electronic Co., Ltd.
Kersemi Electronic Co., Ltd...
|
| 408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
| DXO885915-5 |
Planar Resonator Construction
|
SYNERGY MICROWAVE CORPO...
|
| ES2X-13-F ES2XA-13-F ES2B-13-F ES2AA |
2.0A SURFACE MOUNT SUPER-FAST RECTIFIER
RECTIFIER FAST-RECOVERY SINGLE 2A 100V 50A-ifsm 0.92V-vf 25ns 5uA-ir SMB 3K/REEL-13 2 A, 100 V, SILICON, RECTIFIER DIODE
Glass Passivated Die Construction
|
Diodes Incorporated
Diodes, Inc.
|
| 2SPT6341SD |
MultiEpitaxial Planar NPN Power Transistor Die
|
Solid States Devices, Inc
|
| 1N965 JANTX1N957B-1 1N960 1N985 1N963 1N967 JANTXV |
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 24 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 10 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 20 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 10 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 56 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 27 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
MVSTBW 2,5/21-ST 12 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA
Zener Voltage Regulator Diode
RES 348-OHM 0.1% 0.125W 25PPM THIN-FILM SMD-1206 TR-7-PA
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION
|
MICROSEMI CORP-LAWRENCE
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
http://
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
| AM29BL802C_03 AM29BL802C AM29BL802CB80DGE1 AM29BL8 |
Am29BL802C (Known Good Die Supplement)
8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1
|
Advanced Micro Devices
SPANSION[SPANSION]
|
|
