PART |
Description |
Maker |
RCR150BX12 RCR150BX16 RCR150BX20 RCR150BX24 FR500A |
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|STF-M20 THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|STF-M20 THYRISTOR|REVERSE-CONDUCTING|1KV V(DRM)|STF-M20 THYRISTOR|REVERSE-CONDUCTING|1.2KV V(DRM)|STF-M20 THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR84 晶闸管|反向导电| 600V的五(DRM)的|00VAR84 THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR50 THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200AB THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|TO-200VAR50
|
Rochester Electronics, LLC
|
DGT304RE DGT304RE13 |
Reverse Blocking Gate Turn-off Thyristor 390 A, 1300 V, REVERSE CONDUCTING GTO SCR
|
Dynex Semiconductor, Ltd. Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
|
5SHX19L6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
5SHX10H6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
IHY20N120R3 IHY15N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
IKW30N65WR5 IKW30N65WR5-15 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
IHW20N120R |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
IHW15N120R2 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
IHW20N120R2 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
IHW30N120R2 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
TISP5XXXH3BJ TISP5095H3BJ TISP5095H3BJR-S TISP5080 |
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS 95 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS 80 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA
|
Bourns Inc. Bourns, Inc.
|
DRA03TG DRA03T DRA03TB DRA03TC DRA03TE |
0.3A Reverse Blocking Thyristor
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|