| PART |
Description |
Maker |
| GM76C256CLLFW GM76C256CLL GM76C256C GM76C256CE GM7 |
32K x8 bit 5.0V Low Power CMOS slow SRAM
32K x8 bit 5.0V Low Power CMOS slow SRAM 32K的x8.0V低功耗CMOS SRAM的速度
32K X 8 STANDARD SRAM, 55 ns, PDSO28
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| LY62256SL LY62256SV LY62256RL LY62256 LY62256DL LY |
32K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| IS61LV3216L-12K IS61LV3216L-12T IS61LV3216L-12KI I |
32K x 17 Low Voltage High-Speed CMOS Static RAM(3.3V,32K x 16 低压高速CMOS静态RAM)
32K x 16 LOW VOLTAGE CMOS STATIC RAM 32K X 16 STANDARD SRAM, 20 ns, PDSO44
|
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution, Inc.
|
| IS62C256AL-45ULI IS62C256AL-45UI IS62C256AL-45TL |
32K x 8 LOW POWER CMOS STATIC RAM 32K X 8 STANDARD SRAM, 45 ns, PDSO28
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| IC62C256 IC62C256-45T IC62C256-45TI IC62C256-45U I |
70ns; 5V; 32K x 8 low power CMOS static RAM
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
45ns; 5V; 32K x 8 low power CMOS static RAM
|
Integrated Circuit Solution...
ICSI[Integrated Circuit Solution Inc]
|
| M5M5256DFP-70G M5M5256DFP-70GI M5M5256DVP-70G M5M5 |
32K X 8 STANDARD SRAM, 70 ns, PDSO28
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
Memory>Low Power SRAM
|
Renesas Electronics Corporation
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| AS6C62256A AS6C62256A-70PIN |
Common data inputs and data outputs
32K X 8 BIT LOW POWER CMOS SRAM
|
Alliance Semiconductor ...
|
| LP61L256B LP61L256BS-12 LP61L256BV-12 |
32K X 8 Bit High SPEED LOW VCC CMOS SRAM
|
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| BS62UV256SCP10 BS62UV256SCP15 BS62UV256TIP10 BS62U |
Ultra Low Power CMOS SRAM 32K X 8 bit
|
Brilliance Semiconductor
Brilliance Semiconducto...
|
| IS65C256AL-25UA3 IS65C256AL-25TLA3 IS65C256AL-25UL |
32K x 8 LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc.
|
