| PART |
Description |
Maker |
| Q60103-Y32-E Q60103-Y32-F Q60103-Y23-F Q60103-Y23- |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes PNP晶体管为自动输入
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
PNP TRANSISTORS FOR AF INPUT STAGES
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| STIP4006 STI2006 STIP3006 STI2506 STIP2506 STIP150 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:320V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-66
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:20mA
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 1A I(C) | TO-66
|
|
| STK10C68-S30I STK10C68-C30I |
NVRAM (EEPROM Based)
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:10mA; Package/Case:3-TO-92; Current, It av:0.8A; Holding Current:15mA
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:10A; Holding Current:35mA NVRAM中（EEPROM的基础
|
Cypress Semiconductor, Corp.
|
| LS31801111 LS3180-GK LS3180-H LS3180-J LS3180-JM L |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:25mA; Current, It av:8A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:35mA; Current, It av:8A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:10mA; Current, It av:8A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes T1毫米）广角发光二极管
T1 (3mm) WIDE ANGLE LED LAMP T1毫米）广角发光二极管
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| HD-15531883 HD-15531/883 |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:30V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:50uA
Multiconductor Cable; Number of Conductors:6; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:FRPE - Flame Retardant Polyethylene; Leaded Process Compatible:Yes; Capacitance:17uF; Conductor Material:Copper RoHS Compliant: Yes
|
Intersil Corporation
|
| BD537 BD535 BD533 BD533J |
NPN Epitaxial Silicon Transistor
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A; Holding Current:60mA
Medium Power Linear and Switching Applications 8 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-220
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| C122N |
Silicon controlled rectifier. Reverse blocking triode thyristor. 8 A RMS. Repetitive peak off-state voltage and repetitive peak reverse voltage 800 V.
|
Motorola
|
| SRF1020111111 SR1050 SR1060 SRF10A0 SRF1080 SR1020 |
Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 10.0 A.
Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 10.0 A.
|
Shanghai Sunrise Electronics
CHENYI[Shanghai Lunsure Electronic Tech]
Chenyi Electronics
|
| STK1040 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-202; Current, It av:10A; Holding Current:50mA
|
|
| BD139-25 BD135-25 BD137-25 |
Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:5mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-126
Diac Thyristor; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Package/Case:Axial Leaded; Peak Surge Current:2A; Breakover Voltage Min:30V RoHS Compliant: Yes 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1.5AI（丙）|126
|
HIROSE ELECTRIC Co., Ltd.
|
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