| PART |
Description |
Maker |
| 2N6796LCC4 |
N-Channel Power MOSFET（Vdss00VId(cont).4A，Rds(on).18ΩN沟道功率型MOS场效应管（Vdss00VId(cont).4A，Rds(on).18Ω
|
SEME-LAB[Seme LAB]
|
| IRFN140SMD |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）3.9A，的Rds（on）：0.077Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本100V的，身份证（续）3.9A时，RDS（对）：0.077Ω））
|
TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
|
| SML80H14 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 13.5 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω))
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| PZT2222A |
Power Dissipation
|
SK Electronics
|
| 1N5943A 1N5929A 1N5937A 1N5949A 1N5950A 1N5930A 1N |
POWER DISSIPATION: 1.5W
|
Shenzhen Luguang Electronic Technology Co., Ltd
|
| BZT03C20 BZT03C200 BZT03D130 BZT03C10 BZT03C180 BZ |
POWER DISSIPATION: 3.25 W
|
Shenzhen Luguang Electronic Technology Co., Ltd
Shenzhen Luguang Electronic...
Shenzhen Luguang Electr...
|
| KTC601U |
Power dissipation: PC=200mW
|
TY Semiconductor Co., Ltd
|
| D7100W |
Low power dissipation
|
Nell Semiconductor Co.,...
|
| MMSZ5221B |
500mW Power Dissipation
|
TY Semiconductor Co., Ltd
|
| KTA1273 |
Collector Power Dissipation: PC=500mW
|
TY Semiconductor Co., Ltd
|
| BUK444-800B |
SOA is Power Dissipation Limited
|
Inchange Semiconductor ...
|
