| PART |
Description |
Maker |
| IRFY430M-T257 |
Publications, Books RoHS Compliant: NA
N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| 1331 1332 1320G1BLACK 1327 1300 110G9 1377G1 1377G |
CONTACT 15A CRIMP/SOLDER
POWERPOLE HOUSING & CONT.BLK
POWERPOLE HOUSING RED
POWERPOLE HOUSING & CONT.BLUE
CONTACT 25A 90DEG PCB 0.7
CONTACT 25A VERTICAL PCB MTG
POWERPOLE HOUSING & CONT. RED
PLUG FREE LATCHED 6 WAY
CONTACT 25A 90DEG PCB 0.4 联系25A90度板0.4
CONTACT 30A CRIMP/SOLDER 联系30A条卷
POWERPOLE HOUSING & CONT. RED POWERPOLE房屋
LOCKING PIN POWERPACK 锁销强力
POWERPOLE HOUSING GREEN POWERPOLE房屋
|
3M Company
Anderson Power Products, Inc.
|
| IRF9130SMD |
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω））
N-Channel N沟道
|
NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
|
| 1N2169 1N2164A 1N2171 1N2167 1N2165A 1N2170A 1N216 |
Power Dissipation
|
New Jersey Semi-Conductor P...
|
| D12000W |
Low power dissipation
|
Nell Semiconductor Co.,...
|
| VSC8171 VSC8172 |
SONET/SDH 16:1 Mux with CMU. 5.2V power supply, 2.6W power dissipation
|
Vitesse Semiconductor Corporation
Vitesse Semiconductor C...
|
| KTA1504 |
Collector Power Dissipation: PC=150mW
|
TY Semiconductor Co., Ltd
|
| BUX21A |
HIGH POWER DISSIPATION TRANSISTOR
|
Comset Semiconductors
|
| 2SB766A |
Large collector power dissipation PC
|
MAKO SEMICONDUCTOR CO.,...
|
