| PART |
Description |
Maker |
| SI2303ADS-T1 SI2303ADS-T1-E3 |
1300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 TO-236, 3 PIN
1300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 LEAD FREE PACKAGE-3
|
Vishay Intertechnology, Inc.
|
| SBL51214X SBL51214 |
BIDI TM Transceiver Optical Module 1300/1300 nm,Low Power
From old datasheet system
|
Infineon
|
| SDR9PF SDR9PFS SDR9PFSMS SDR9PFSMSS SDR9PFSMSTX SD |
7.0 AMP FAST RECOVERY RECTIFIER 1300 娄隆 1500 VOLTS
7.0 AMP FAST RECOVERY RECTIFIER 1300 ─ 1500 VOLTS
7 A, 1400 V, SILICON, RECTIFIER DIODE
7 A, 1300 V, SILICON, RECTIFIER DIODE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
Solid States Devices, I...
|
| SR02150 SR0220 SR02100-HF-T SR02200-HF-F SR0220-HF |
LOW Vf SCHOTTKY BARRIER RECTIFIER
0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-41
0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-41
0.2 A, 20 V, SILICON, SIGNAL DIODE, DO-41
0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-41
|
Rectron Semiconductor
RECTRON LTD
|
| HFCT-5305 |
Gigabit Ethernet: 1.25 GBd 1300 nm Laser Transceiver in Low Cost 1 x 9 Package Style 千兆位以太网.25 GBd 1300 nm激光收发器的低成本1 × 9封装形式
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| D1029N26T |
1300 A, 2600 V, SILICON, RECTIFIER DIODE
|
INFINEON TECHNOLOGIES AG
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| STL51004A STL51004G STL51004X STL51005A STL51005G |
1300 nm Laser, Low Power
From old datasheet system
1300 nm Laser in Coaxial Package with SM-Pigtail Low Power
1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power 1300 nm激光的同轴封装与钐尾纤，低功
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| ELS-1300 |
Electronic Line Stretcher 750 to 1300 MHz 750 MHz - 1300 MHz, 360 deg RF/MICROWAVE PHASE SHIFTER
|
MINI[Mini-Circuits]
|
| BAT54S-V BAT54-V BAT54A-V BAT54-V10 BAT54C-V BAT54 |
Small Signal Schottky Diodes, Single and Dual
0.2 A, 30 V, SILICON, SIGNAL DIODE
0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Vishay Siliconix
VISHAY SEMICONDUCTORS
|
| 1N347 1N256 1N2029 1N2370 1N1342B 1N338 |
1 A, 100 V, SILICON, SIGNAL DIODE
1 A, 600 V, SILICON, SIGNAL DIODE
1 A, 400 V, SILICON, SIGNAL DIODE
1 A, 2000 V, SILICON, SIGNAL DIODE
6 A, 100 V, SILICON, RECTIFIER DIODE
|
|
| BYM11-50 BYM11-800 BYM11-600 BYM11-400 BYM11-100 B |
1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
Surface Mount Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A
|
Vishay Beyschlag
|
|
