| PART |
Description |
Maker |
| MA4VAT904-1061T MA4VAT904-1061T-15 |
High IIP3 PIN Diode Variable Attenuator 0.8 - 1.0 GHz
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| MADC-010736 |
Receiver, High IIP3
|
M/A-COM Technology Solu...
|
| SF37G SF38G |
SUPE RFAST RECOVERY RECTIFIERS VOLTAG E - 50 to 8 00 Volts CURRENT - 3.0 Amperes
|
Yea Shin Technology Co., Ltd
Yea Shin Technology Co....
|
| ZX60-M-SERIES ZX60-2510M ZX60-2514M ZX60-2522M ZX6 |
High Isolation Amplifiers 50з, 0.5 to 5.9 GHz 500 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
High Isolation Amplifiers 50? 0.5 to 5.9 GHz
From old datasheet system
High Isolation Amplifiers 50/ 0.5 to 5.9 GHz
|
MINI[Mini-Circuits]
|
| ZSWA-4-30DR |
Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:22-55
Switch High Isolation, SP4T, 50 DC to 3 GHz
Switch High Isolation, SP4T, 50з DC to 3 GHz
Switch High Isolation/ SP4T/ 50 DC to 3 GHz
|
开
MINI[Mini-Circuits]
|
| TIM1414-7-252 |
HIGH POWER P1dB=38.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| PE6200 |
75 Watts High Power WR-28 RF Load 26.5 GHz to 40 GHz
|
Pasternack Enterprises,...
|
| TIM1414-8-252 |
HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| ES0309-100 |
High Power Switch 0.1 GHz to 1 GHz
|
Micronetics, Inc.
|
| ES0313-50 |
High Power Switch 0.5 GHz to 4 GHz
|
Micronetics, Inc.
|
| EL0095 |
High Power Limiters 8 GHz to 12 GHz
|
Micronetics, Inc.
|
| EL0056 |
High Power Limiters 5 GHz to 9 GHz
|
Micronetics, Inc.
|
