| PART |
Description |
Maker |
| IRF5NJ9540 IRF5NJB9540 |
-100V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package
SURFACE MOUNT (SMD-0.5) 100V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
| IRF5Y1310CM |
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
THRU-HOLE (TO-257AA) 100V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.044ohm, Id=18A*)
|
IRF[International Rectifier]
|
| IRFL9110 IRFL9110TR |
-100V Single P-Channel HEXFET Power MOSFET in a SOT-223 package
Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-1.1A)
|
IRF[International Rectifier]
|
| FQU8P10 FQD8P10 FQD8P10TF FQD8P10TM FQU8P10TU |
100V P-Channel QFET
100V P-Channel MOSFET 6.6 A, 100 V, 0.53 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRF520VL IRF520VS |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)
|
IRF[International Rectifier]
|
| IRF7452 IRF7452TR |
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=100V, Rds(on)max=0.060ohm, Id=4.5A)
|
IRF[International Rectifier]
|
| FQB19N10L FQI19N10L FQB19N10LTM |
100V Logic N-Channel MOSFET(漏源电压00V的逻辑N沟道增强型MOS场效应管) 19 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
100V N-Channel Logic Level QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRLU120N IRLU120NPBF IRLR120N IRLR120NPBF IRLR120N |
Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.185ohm，身份证\u003d 10A条）
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package
|
International Rectifier, Corp.
|
| STQ1NE10L STQ1NE10L-AP |
N-CHANNEL 100V - 0.3 ohm - 1A TO-92 STripFETPOWER MOSFET
N-CHANNEL 100V - 0.3 ohm - 1A TO-92 STripFET POWER MOSFET
N-CHANNEL 100V - 0.3 ohm - 1A TO-92 STripFET⑩ POWER MOSFET
|
意法半导
STMicroelectronics
ST Microelectronics
|
| IRFD120 |
Power MOSFET(Vdss=100V, Rds(on)=0.27ohm, Id=1.3A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.27ohm，身份证\u003d 1.3a标准
Power MOSFET(Vdss=100V/ Rds(on)=0.27ohm/ Id=1.3A)
HEXFET? Power MOSFET
100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
