| PART |
Description |
Maker |
| SC070S150S5B SC070R100A5P SC070H015A5P SC070H015S5 |
SCHOTTKY DIE 70 X 92 MILS 肖特基模70 × 92 MILS
|
BI Technologies, Corp.
International Rectifier, Corp.
|
| SB063P200-W-AG SB063P200-W-AG_AL SB063P200-W-AG/AL |
Schottky Barrier Diode Wafer 63 Mils, 200 Volt, 3 Amp
|
TRANSYS Electronics Lim...
TRANSYS Electronics Limited
|
| SC105..5.SERIES |
SCHOTTKY DIE 105 x 125 mils
|
International Rectifier
|
| SD090SC150A |
SILICON SCHOTTKY RECTIFIER DIE Low Forward Voltage Drop (200 ??TJ Operation)
|
SENSITRON SEMICONDUCTOR
|
| SD175SC100A SD175SC100B SD175SC100C |
SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop 200°C Operating Temperature
SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop 200∑C Operating Temperature
SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop 200?? Operating Temperature
|
SENSITRON[Sensitron]
|
| SD175SC100B |
SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop 200?? Operating Temperature
|
SENSITRON SEMICONDUCTOR
|
| SD040SC100A SD040SC100B |
SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop 200°C Operating Temperature
SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop 200∑C Operating Temperature
SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop 200?? Operating Temperature
|
SENSITRON[Sensitron]
|
| AT24C512-W2.7-11 |
10MS, DIE, 2.7V, 11 MILS THICKNESS(SERIAL EE)
|
ATMEL CORP
|
| M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
