| PART |
Description |
Maker |
| TDA4665T TDA4665 |
DIODE SCHOTTKY 40V 40A TO247AC
Baseband delay line
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BTS5440G |
Smart High Side Switches - 4,5-28V(40V Loaddump), 4x25m? Limit(scr) 10A/40A P-DSO-28
Addendum for PCN-Datasheet 2004-018-A
|
Infineon Technologies AG
|
| HD06 HD04 HD01 HD02 |
0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Triac; Package/Case:TO-48; Current, It av:40A; Mounting Type:Through Hole; Repetitive Reverse Voltage Max, Vrrm:200V; Current Rating:40A; Voltage
TRIAC,200V V(DRM),25A I(T)RMS,TO-220
TRIAC-600VRM-25A-TO220
|
DIODES[Diodes Incorporated]
Diodes Inc.
|
| X9316W X9316WP X9316WP3 X9316WPI X9316WPI3 X9316WP |
E 2 POT?Nonvolatile Digital Potentiometer
E 2 POT?/a> Nonvolatile Digital Potentiometer
E 2 POT?/a> Nonvolatile Digital Potentiometer
E 2 POT Nonvolatile Digital Potentiometer
E 2 POT⑩ Nonvolatile Digital Potentiometer
BRIDGE RECTIFIER, 1.2A 40VBRIDGE RECTIFIER, 1.2A 40V; Voltage, Vrrm:120V; Voltage, input RMS:40V; Current, output max:2.5A; Phases, No. of:1; Current, Ifs max:80A; Length / Height, external:12mm; Depth, external:5mm; Width, 首页2锅⑩非易失数字电位器
E2POT nonvolatile digital potentiometer
|
XICOR[Xicor Inc.]
NXP Semiconductors N.V.
|
| PA52 |
Amplifiers - Apex Linear Op-Amp, 200V, 40A OP-AMP, 10000 uV OFFSET-MAX, 3 MHz BAND WIDTH, MDFM12
|
Cirrus Logic, Inc.
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| 126S 117S 151S 176S |
THYRISTOR/DIODE MODULE, 40A 1200VTHYRISTOR/DIODE MODULE, 40A 1200V; Voltage, Vrrm:1200V; Current, It av:40A; Case style:SEMIPACK 1; Current, It rms
3/8 (9.52mm) Sq. Wirewound Trimmers
3/8in [9.52mm] Sq. Wirewound Trimmers, Precious Metal Wiper, Solderable Leads, Military Quality at Affordable Prices
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| GBL400 GBL404 GBL402 GBL401 GBL406 GBL408 |
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 800V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 600V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)
Aluminum Polymer SMT Capacitor; Capacitance: 1000uF; Voltage: 4V; Case Size: 10x8 mm; Packaging: Tape & Reel
|
PANJIT[Pan Jit International Inc.]
PanJit International Inc.
|
| Z88C00-20VSC Z88C00-25VEC Z88C00-20VEC Z88C01-25VE |
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA; Holding Current:35mA RoHS Compliant: Yes
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:100mA; Package/Case:3-TO-218X; Current, It av:40A; Gate Trigger Current Max, Igt:100mA
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Package/Case:V-PAK; Current, It av:6A; Gate Trigger Current Max, Igt:35mA
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Holding Current:50mA; Leaded Process Compatible:Yes RoHS Compliant: Yes
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:4A; Holding Current:30mA
Microcontroller 微控制器
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:100mA; Package/Case:3-TO-218; Current, It av:40A; Gate Trigger Current Max, Igt:100mA 8位微控制
|
Maxim Integrated Products, Inc.
|
| CDBUR40 |
Small Signal Schottky Diodes, V-RRM=40V, V-R=40V, I-O=200mA
|
Comchip Technology
|
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