| PART |
Description |
Maker |
| RJK0455DPB RJK0455DPB13 RJK0455DPB-00-J5 |
40V, 45A, 3.8m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK03H1DPA RJK03H1DPA-00-J5A RJK03H1DPA13 |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET
|
Renesas Electronics Corporation
|
| RJK0456DPB RJK0456DPB13 RJK0456DPB-00-J5 |
40V, 50A, 3.2m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| IRF7471 |
Power MOSFET(Vdss=40V, Rds(on)max=13mohm, Id=10A)
|
IRF[International Rectifier]
|
| DAN803 DAP803 DA4148 DA4148A DA4148K |
Switch Mode Power Supply; Output Power:10W; No. of Outputs:2; Output 1 VDC :12VDC; Output Current 1:0.45A; Output 2 VDC -:12VDC; Power Supply Mounting:PC Board; Leaded Process Compatible:No; Output Current:0.45A RoHS Compliant: Yes
Small Signal Diode Arrays
|
DIOTEC SEMICONDUCTOR AG
DIOTEC[Diotec Semiconductor]
Diotec Elektronische
|
| STR-BS6301 STRS6301 STR-S6301 |
Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns;
SWITCHING REGULATOR HYRRTD lC
|
Sanken Electric Co.,Ltd.
|
| BAS40DW-04 BAS40DW-05-TP BAS40DW-06-TP BAS40TW BAS |
200mW SCHOTTKY BARRIER Diode
DIODE SCHOTTKY 200MW 40V SOT363 0.2 A, 40 V, 4 ELEMENT, SILICON, SIGNAL DIODE
DIODE SCHOTTKY ARRAY 40V SOT-363 0.2 A, 40 V, 3 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
| CDBV6-00340TI-G |
Small Signal Schottky Diodes, V-RRM=40V, V-R=40V, I-O=30mA
|
Comchip Technology
|
| CDBZ2240LL-HF |
Halogen Free Low VF Schottky Barrier, V-RRM=40V, V-R=40V, I-O=2A
|
Comchip Technology
|
| CDBKM140 |
Schottky Barrier Rectifiers Diodes, V-RRM=40V, V-R=40V, I-O=1A
|
Comchip Technology
|
