| PART |
Description |
Maker |
| KBU3501-G KBU3502-G KBU3504-G KBU3506-G KBU3510-G |
Bridge Rectifiers, V-RRM=600V, V-DC=600V, I-(AV)=35A
Bridge Rectifiers, V-RRM=50V, V-DC=50V, I-(AV)=35A
Bridge Rectifiers, V-RRM=100V, V-DC=100V, I-(AV)=35A
Bridge Rectifiers, V-RRM=200V, V-DC=200V, I-(AV)=35A
Silicon Bridge Rectifiers
Bridge Rectifiers, V<sub>RRM</sub>=1000V, V<sub>DC</sub>=1000V, I<sub>(AV)</sub>=35A
Bridge Rectifiers, V-RRM=800V, V-DC=800V, I-(AV)=35A
Bridge Rectifiers, V-RRM=400V, V-DC=400V, I-(AV)=35A
|
Comchip Technology
|
| SBA100-04Y SBA100-04YSMP-FD |
10 A, 40 V, SILICON, RECTIFIER DIODE SMP-FD, 3 PIN
Schottky Barrier Diode (Twin Type Cathode Common) 40V, 10A Rectifier
40V 10A Rectifier
40V/ 10A Rectifier
|
SANYO Semiconductor Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| RJK03E9DPA RJK03E9DPA-00-J5A |
30V, 35A, 4.3m max N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| BP35-06F BP35-08F BP35-005F BP35-01F BP35-02F BP35 |
35A HIGH CURRENT SILICON BRIDGE RECTIFIERS
|
Frontier Electronics.
|
| LT3970EMS-3.3-PBF LT3970EMS-3.3-TRPBF LT3970EMS-5- |
40V, 350mA Step-Down Regulator with 2.5楼矛A Quiescent Current and Integrated Diodes
40V, 350mA Step-Down Regulator with 2.5μA Quiescent Current and Integrated Diodes
40V, 350mA Step-Down Regulator with 2.5µA Quiescent Current and Integrated Diodes, 10-Lead Plastic MSOP, Temp E –40°C to 125°C 0.865 A SWITCHING REGULATOR, 2640 kHz SWITCHING FREQ-MAX, PDSO10
40V, 350mA Step-Down Regulator with 2.5µA Quiescent Current and Integrated Diodes, 10-Lead (3mm × 2mm) Plastic DFN, Temp I –40°C to 125°C 0.865 A SWITCHING REGULATOR, 2640 kHz SWITCHING FREQ-MAX, PDSO10
|
http://
Linear Technology, Corp.
LINEAR TECHNOLOGY CORP
|
| HT1000/08OJ6 |
800V V[drm] Max., 980A I[T] Max. Silicon Controlled Rectifier
|
Herrmann
|
| MAX15014AATX |
1A, 4.5V to 40V Input Buck Converters with 50mA Auxiliary LDO Regulators 2.6 A SWITCHING REGULATOR, 150 kHz SWITCHING FREQ-MAX, QCC36
|
Maxim Integrated Products, Inc.
|
| SBA160-04Y |
Schottky Barrier Diode (Twin Type Cathode Common) 40V, 16A Rectifier
40V, 16A Rectifier(用于高频整流应用的重复反向电0V，平均整流电6A 整流
40V/ 16A Rectifier
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| ET35 ET40 ET36B |
6-A, 3.3/5 Vin DC/DC Converter with Disabled Sinking During Startup
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|40V V(BO) MAX|25UA I(S)|TO-92 移民部（双向二极管晶闸管）| 40V的五（公报）最大| 25UA我（县）|92
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|38V V(BO) MAX|25UA I(S)|TO-92 移民部（双向二极管晶闸管）| 38V的五（公报）最大| 25UA我（县）|92
|
Sullins Connector Solutions, Inc.
|
| CDBU0340 |
Small Signal Schottky Diodes, V-RRM=40V, V-R=40V, I-O=350mA
|
Comchip Technology
|
| CDBA5819-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=40V, V-R=40V, I-O=1A
|
Comchip Technology
|
|
