| PART |
Description |
Maker |
| RJK0856DPB-15 |
80V, 35A, 8.9m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0452DPB13 RJK0452DPB-00-J5 |
40V, 45A, 3.5m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0454DPB-00-J5 RJK0454DPB13 |
40V, 40A, 4.9m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| GBPC3501W GBPC3510W GBPC35005 GBPC35005W GBPC3501 |
600V; 35A glass passivated bridge rectifier
HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 35 Amperes)
Dual Audio Operational Amplifier 8-TSSOP -40 to 85 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
35A GLASS PASSIVATED BRIDGE RECTIFIER 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
|
Pan Jit International Inc.
DIODES[Diodes Incorporated]
Diodes, Inc.
|
| BYP58-800 BYP57 BYP57-100 BYP57-150 BYP57-200 BYP5 |
35 A, 200 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
35 A, 700 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
35 A, 150 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
35 A, 75 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
35A Silicon Power Rectifier Diode 35 A, 150 V, SILICON, RECTIFIER DIODE
35A Silicon Power Rectifier Diode 35 A, 75 V, SILICON, RECTIFIER DIODE
35A Silicon Power Rectifier Diode 35 A, 500 V, SILICON, RECTIFIER DIODE
|
Diodes, Inc.
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
| X9316W X9316WP X9316WP3 X9316WPI X9316WPI3 X9316WP |
E 2 POT?Nonvolatile Digital Potentiometer
E 2 POT?/a> Nonvolatile Digital Potentiometer
E 2 POT?/a> Nonvolatile Digital Potentiometer
E 2 POT Nonvolatile Digital Potentiometer
E 2 POT⑩ Nonvolatile Digital Potentiometer
BRIDGE RECTIFIER, 1.2A 40VBRIDGE RECTIFIER, 1.2A 40V; Voltage, Vrrm:120V; Voltage, input RMS:40V; Current, output max:2.5A; Phases, No. of:1; Current, Ifs max:80A; Length / Height, external:12mm; Depth, external:5mm; Width, 首页2锅⑩非易失数字电位器
E2POT nonvolatile digital potentiometer
|
XICOR[Xicor Inc.]
NXP Semiconductors N.V.
|
| BP35-06F BP35-08F BP35-005F BP35-01F BP35-02F BP35 |
35A HIGH CURRENT SILICON BRIDGE RECTIFIERS
|
Frontier Electronics.
|
| LT3970EMS-3.3-PBF LT3970EMS-3.3-TRPBF LT3970EMS-5- |
40V, 350mA Step-Down Regulator with 2.5楼矛A Quiescent Current and Integrated Diodes
40V, 350mA Step-Down Regulator with 2.5μA Quiescent Current and Integrated Diodes
40V, 350mA Step-Down Regulator with 2.5µA Quiescent Current and Integrated Diodes, 10-Lead Plastic MSOP, Temp E –40°C to 125°C 0.865 A SWITCHING REGULATOR, 2640 kHz SWITCHING FREQ-MAX, PDSO10
40V, 350mA Step-Down Regulator with 2.5µA Quiescent Current and Integrated Diodes, 10-Lead (3mm × 2mm) Plastic DFN, Temp I –40°C to 125°C 0.865 A SWITCHING REGULATOR, 2640 kHz SWITCHING FREQ-MAX, PDSO10
|
http://
Linear Technology, Corp.
LINEAR TECHNOLOGY CORP
|
| HT1000/08OJ6 |
800V V[drm] Max., 980A I[T] Max. Silicon Controlled Rectifier
|
Herrmann
|
| GBL400 GBL404 GBL402 GBL401 GBL406 GBL408 |
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 800V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 600V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)
Aluminum Polymer SMT Capacitor; Capacitance: 1000uF; Voltage: 4V; Case Size: 10x8 mm; Packaging: Tape & Reel
|
PANJIT[Pan Jit International Inc.]
PanJit International Inc.
|
| STR-BS6301 STRS6301 STR-S6301 |
Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns;
SWITCHING REGULATOR HYRRTD lC
|
Sanken Electric Co.,Ltd.
|
| CDBV3-00340S-G CDBV3-00340A-G |
Small Signal Schottky Diodes, V-RRM=40V, V-R=40V, I-O=30mA
|
Comchip Technology
|
