| PART |
Description |
Maker |
| NVD5890N NVD5890NT4G |
Power MOSFET 40 V, 123 A, Single N?Channel DPAK
|
ON Semiconductor
|
| MMSZ52XXET3G MMSZ5221ET1 MMSZ5223ET1 MMSZ5226ET1 M |
225 W e-Rated Zener 22 V SOD-123; Package: SOD-123 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 3000 22 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Zener Voltage Regulators 500 mW SOD−123 Surface Mount
|
ONSEMI[ON Semiconductor]
|
| IMP525 |
Sing Single Cell Batt le Cell Batterery Powered Electroluminescent Lamp Driv er/Inverter(单节电池供电的电致发光（EL）灯驱动反相
|
IMP
|
| AUIRF2905ZSTRL AUIRF2905ZSTRR AUIRFR2905ZTR AUIRFR |
HEXFET垄莽 Power MOSFET
HEXFET庐 Power MOSFET
HEXFET? Power MOSFET
42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
|
International Rectifier
List of Unclassifed Man...
|
| MBR0530 |
0.5 Ampere Schottky Power Rectifiers; Package: SOD-123; No of Pins: 2; Container: Tape & Reel
|
FAIRCHILD SEMICONDUCTOR CORP
|
| MBR0520LNF065 MBR0520LF065 |
0.5 Ampere Schottky Power Rectifiers; Package: SOD-123; No of Pins: 2; Container: Tape & Reel 0.5 A, 20 V, SILICON, SIGNAL DIODE
|
Fairchild Semiconductor, Corp.
|
| VUM33-05N VUM33-05 IXYSCORP-VUM33-05N |
Power MOSFET Stage for Boost Converters 47 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
Power Factor Correction Modules: MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| AUIRF1404Z AUIRF1404ZL AUIRF1404ZS |
HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET
160 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Low On-Resistance
|
International Rectifier
List of Unclassifed Man...
|
| JE10 JE1046ZTL2R JE10112HL1 JE10112HL1R JE10112HL2 |
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 1.1pF; Voltage: 100V; Tolerance: ±0.25pF; TC: BP; Chip Size: SMD-1206; Termination: Nickel Guarded, Solder Coated (Sn60)
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 10pF; Voltage: 100V; Tolerance: ±10%; TC: BP; Chip Size: SMD-1206; Termination: Nickel Guarded, Solder Coated (Sn60)
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 10pF; Voltage: 100V; Tolerance: ±10%; TC: BP; Chip Size: SMD-0805; Termination: Nickel Guarded, Solder Coated (Sn60)
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 100pF; Voltage: 100V; Tolerance: ±5%; TC: BP; Chip Size: SMD-0805; Termination: Nickel Guarded, Solder Coated (Sn60)
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 100pF; Voltage: 100V; Tolerance: ±5%; TC: BP; Chip Size: SMD-1206; Termination: Nickel Guarded, Solder Coated (Sn60)
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 100pF; Voltage: 50V; Tolerance: ±1%; TC: BP; Chip Size: SMD-0805; Termination: Nickel Guarded, Solder Coated (Sn60)
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 100pF; Voltage: 50V; Tolerance: ±10%; TC: BP; Chip Size: SMD-0805; Termination: Nickel Guarded, Solder Coated (Sn60)
MINIATURE HIGH POWER LATCHING RELAY 微型大功率磁保持继电
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 1.2pF; Voltage: 50V; Tolerance: ±0.25pF; TC: BP; Chip Size: SMD-0805; Termination: Nickel Guarded, Solder Coated (Sn60) 微型大功率磁保持继电
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 10pF; Voltage: 100V; Tolerance: ±5%; TC: BP; Chip Size: SMD-0805; Termination: Nickel Guarded, Solder Coated (Sn60) 微型大功率磁保持继电
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 100pF; Voltage: 100V; Tolerance: ±10%; TC: BP; Chip Size: SMD-1206; Termination: Nickel Guarded, Solder Coated (Sn60) 微型大功率磁保持继电
MINIATURE HIGH POWER LATCHING RELAY
|
HONGFA[Hongfa Technology]
厦门宏发电声股份有限公司
Xiamen Hongfa Electroacoustic Co., Ltd.
???瀹???靛０?′唤??????
|
| AUIRF3710ZSTRL AUIRF3710ZSTRR AUIRF3710Z AUIRF3710 |
HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET
59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
International Rectifier
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| IRLL024N IRLL024NPBF IRLL024NTR |
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
HEXFET Power MOSFET(HEXFET 功率MOS场效应管)
HEXFET Power MOSFET(HEXFET ???MOS?烘?搴??)
4.4 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
|
IRF[International Rectifier]
|
