| PART |
Description |
Maker |
| MJH6284 MJH6287 MJH6282 MJH6283 MJH6285 MJH6286 |
Supplementary protector; Current Rating:25A; No. of Poles:2; Mounting Type:DIN Rail RoHS Compliant: Yes
DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 / 80 / 100 VOLTS 160 WATTS
DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80, 100 VOLTS 160 WATTS
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| HDM160GS16-2 |
160 X 160 Dots Graphic, Low Power w/Touch Screen
|
HANTRONIX[Hantronix,Inc]
|
| WG160160A |
LCD MODULE GRAPHIC 160 x 160 DOTS
|
WINSTAR
List of Unclassifed Manufacturers
|
| MQ200 |
160 A, SILICON, RECTIFIER DIODE, TO-249AA
|
SENSITRON SEMICONDUCTOR
|
| CC610816 CC610816A CD610816 CD610816A CN610816 CN6 |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts 260 A, 1400 V, SILICON, RECTIFIER DIODE
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts 165 A, 1600 V, SILICON, RECTIFIER DIODE
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts 165 A, 1200 V, SILICON, RECTIFIER DIODE
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts
|
Powerex Power Semicondu...
Powerex, Inc.
Powerex Powers
POWEREX[Powerex Power Semiconductors]
Powerex Power Semiconductor...
|
| TC74AC164P07 TC74AC164F TC74AC164FN TC74AC164FT |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 25.10 to 28.90; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 23.72 to 24.78; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.05; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 24.54 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
CMOS Digital Integrated Circuit Silicon Monolithic 8-Bit Shift Register (S-IN, P-OUT)
|
Toshiba Corporation
Toshiba Semiconductor
|
| IRLU8721PBF IRLR8721PBF |
Asynchronous SRAM; Organization (word): 1M; Organization (bit): x 4; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (32); Status: Remarks:
HEXFET Power MOSFET HEXFET功率MOSFET
|
International Rectifier, Corp.
|
| TCB8GOB26CFREQ-OUT5 TCB8GOB26BFREQ-OUT5 HCB8GOD56B |
TCXO, CLOCK, 1 MHz - 160 MHz, LOW POWER SCHOTTKY OUTPUT DIP-4
TCXO, CLOCK, 10 MHz - 160 MHz, HCMOS OUTPUT DIP-4
TCXO, CLOCK, 10 MHz - 160 MHz, ECL 10KH OUTPUT DIP-4
TCXO, CLOCK, 1 MHz - 160 MHz, ACMOS OUTPUT DIP-4
|
Vectron International, Inc.
|
| IMIB9948CA IMIB9948CAT B9948 IMIB9948 |
3.3V, 160-MHz, 1:12 Clock Distribution Buffer
160-MHz Clock Support
|
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
