| PART |
Description |
Maker |
| 1202-052 |
FLTR, SING, PI, BSHG
|
API Technologies Corp
|
| 1216-001 |
FILTER SING, Pi,EYLT,STD
|
API Technologies Corp
|
| 1214-007 |
FILTER SING, Pi,EYLT,STD
|
API Technologies Corp
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| VUM33-05N VUM33-05 IXYSCORP-VUM33-05N |
Power MOSFET Stage for Boost Converters 47 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
Power Factor Correction Modules: MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IRFR6215PBF IRFU6215PBF IRFR6215TR IRFR6215TRL IRF |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
175°C Operating Temperature
|
International Rectifier
|
| IRF1404SPBF IRF1404LPBF IRF1404STRLPBF IRF1404SPBF |
HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET
75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Advanced Process Technology
|
International Rectifier
|
| CDEP115MENP-1R3M |
Ceramic Conformally Coated/Radial High Voltage “Gold Max"; Capacitance: 1pF; Voltage: 1000V; Tolerance: ±5%; TC: C0G; Body Size: .250" (6.35) x .220" (5.59) x .200" (5.08); Lead Style: .170" (4.32)
POWER INDUCTORS
|
SUMIDA CORPORATION.
|
| CDEP10506 CDEP105NP-0R8M CDEP105NP-0R3N CDEP105NP- |
POWER INDUCTORS 功率电感
Ceramic Conformally Coated/Radial High Voltage “Gold Max"; Capacitance: 1pF; Voltage: 1000V; Tolerance: ±20%; TC: C0G; Body Size: .370" (9.40) x .300" (7.62) x .250" (6.35); Lead Style: .275" (6.98)
|
Sumida, Corp.
SUMIDA CORPORATION.
|
| NTP75N06 NTP75N06D NTP75N06G NTB75N06 NTB75N06G NT |
Power MOSFET 75 A, 60 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 75 Amps, 60 Volts
|
ONSEMI[ON Semiconductor]
|
| VRF148A VRF148AMP VRF148A10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 30; P(in) (W): 1; Gain (dB): 15; VDD (V): 50; Coss (pF): 35; Case Style: M113 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
|
