| PART |
Description |
Maker |
| GT50MR21 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| GT40J121 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| GT40QR21 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| SG35N12T SG35N12DT |
Discrete IGBTs
|
Sirectifier Semiconductors
Sirectifier Global Corp.
|
| SG45N12T |
Discrete IGBTs
|
Sirectifier Semiconduct...
Sirectifier Semiconductors
Sirectifier Global Corp.
|
| SG50N06D2S |
(SG50N06D2S / SG50N06D3S) Discrete IGBTs
|
Sirectifier Semiconductors
|
| IXBH40N160 IXBH40N140 |
Discrete IGBTs
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor - N-Channel, Enhancement Mode
|
IXYS Corporation
|
| IXBT10N170 IXBH10N170 |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| 2SH21 |
IGBTs
Silicon N-Channel IGBT
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| ESJC30 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0551-3 00; Connector Type: Wire; Contact Gender
HIGH VOLTAGE SILICON DIODE
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| SGB06N60 SGD06N60 SGP06N60 Q67040-S4450 SGU06N60 Q |
Heat Sink; Package/Case:TO-220; Thermal Resistance:13.4 C/W; Mounting Type:Through Hole; Length:25.4mm; Height:12.7mm; Width:34.92mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes
Fast IGBT in NPT-technology
IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT
IGBTs & DuoPacks - 6A 600V TO252AA SMD IGBT
IGBTs & DuoPacks - 6A 600V TO220AB IGBT
|
INFINEON[Infineon Technologies AG]
|
| IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
