| PART |
Description |
Maker |
| IRGP430U |
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管（IGBTs）（超快速绝缘栅型双极型晶体管）
500V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier, Corp.
|
| GT40WR21 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| GT40RR21 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| SG20N12DT SG20N12T |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
|
| SG50N06T SG50N06DT |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
ETC[ETC]
List of Unclassifed Manufacturers
|
| SG15N12DP SG15N12P |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
|
| IXBT42N170 IXBH42N170 |
Discrete IGBTs
|
IXYS
|
| 10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
1000V 1A Ultra-Fast Discrete Diode in a SMB package
100V 1A Ultra-Fast Discrete Diode in a SMB package
200V 1A Ultra-Fast Discrete Diode in a SMB package
400V 1A Ultra-Fast Discrete Diode in a SMB package
600V 1A Ultra-Fast Discrete Diode in a SMB package
800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors
International Rectifier, Corp.
IRF[International Rectifier]
|
| 2SH22 |
Silicon N-Channel IGBT
IGBTs
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| 2SH26 |
IGBTs
Silicon N Channel IGBT High Speed Power Switching
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| 2SH28 |
IGBTs
Silicon N Channel IGBT High Speed Power Switching
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| 2SH31 |
Silicon N Channel IGBT High Speed Power Switching
IGBTs
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
