| PART |
Description |
Maker |
| BC808-16 BC808-25 BC808-40 Q62702-C1689 BC807 BC80 |
From old datasheet system
SH2 Series, 7086 Group, Two ADC circuits, 6-ch 16-bit MTU2, 3-ch 16-bit MTU2S, Port Output Enable, 2-ch CMT, UBC, 5v IO, 15 mA IO TFP-100B; Vcc= 3.0 to 5.5 volts, Temp= -40 to 85 C; Package: PTQP0100KA-A
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 进步党硅晶体管自动对焦（自动对焦对于一般应用高集电极电流的高电流增益）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Fairchild Semiconductor, Corp.
|
| BC369 C62702-C748 |
From old datasheet system
PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BCP49 Q62702-C2137 BCP29 Q62702-C2136 |
From old datasheet system
NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)
|
SIEMENS[Siemens Semiconductor Group]
|
| BDP948 BDP950 Q62702-D1338 Q62702-D1336 |
From old datasheet system
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
SIEMENS A G
|
| BC635 Q68000-A3361 BC637 BC639 Q68000-A2285 Q68000 |
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN Silicon AF Transistors (High current gain High collector current) NPN硅晶体管自动对焦（高电流增益高集电极电流
From old datasheet system
|
INFINEON TECHNOLOGIES AG
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SA811A |
High DC current gain. Collector-base voltage VCBO -120 V
|
TY Semiconductor Co., Ltd
|
| 2SA1612 |
High DC current gain Collector to base voltage VCBO -120 V
|
TY Semiconductor Co., Ltd
|
| KSD1692 |
NPN (HIGH DC CURRENT GAIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C)
|
Samsung semiconductor
|
| KC808 |
High collector current, High current gain.
|
TY Semiconductor Co., Ltd
|
| 2SC1622A |
NPN Silicon Epitaxial Transistor
High DC current gain.Collector-base voltage VCBO 120 V
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SA1611 |
High DC Current Gain. High Voltage.Collector-base voltage VCBO -60 V
|
TY Semiconductor Co., Ltd
|
