| PART |
Description |
Maker |
| MOF-1/2 |
RESISTOR, METAL OXIDE FILM, 0.5 W, 1; 2; 5; 10 %, 350 ppm, 0.5 ohm - 1000000 ohm, THROUGH HOLE MOUNT AXIAL LEADED
|
Richco, Inc.
|
| MOR-1/2W MOR-1W |
RESISTOR, METAL OXIDE FILM, 0.5 W, 0.1; 0.25; 0.5; 1; 2; 5; 10 %, 350 ppm, 0.3 ohm - 50000 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, METAL OXIDE FILM, 1 W, 0.1; 0.25; 0.5; 1; 2; 5; 10 %, 350 ppm, 0.3 ohm - 50000 ohm, THROUGH HOLE MOUNT AXIAL LEADED
|
Royal Electronic Factory (Thailand) Co., Ltd.
|
| IRFZ30-005 IRFZ22-012 IRFZ25-012 IRF733-005PBF IRF |
30 A, 50 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
14 A, 50 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
16 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
4.5 A, 350 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
9.2 A, 80 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 80 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
2.6 A, 200 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET
50 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
10 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
3.3 A, 150 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
5.6 A, 80 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET
30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
13 A, 250 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET
18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
4.4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Bourns, Inc.
Molex, Inc.
VISHAY INTERTECHNOLOGY INC
|
| IRF9643-001PBF IRF9643-003PBF IRF9643-005PBF IRF96 |
9 A, 150 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET
8.7 A, 350 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
1.75 A, 150 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET
1.75 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET
27 A, 100 V, 0.099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
3 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET
3 A, 150 V, 2.4 ohm, P-CHANNEL, Si, POWER, MOSFET
2.5 A, 100 V, 1.6 ohm, P-CHANNEL, Si, POWER, MOSFET
3.5 A, 150 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
11 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
|
VISHAY INTERTECHNOLOGY INC
|
| IRF451 IRF541 RF343 IRF351 IRF433 IRF712 |
13 A, 450 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
27 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
8 A, 350 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
15 A, 350 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
4 A, 450 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
1.3 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
|
VISHAY SILICONIX
|
| MPR100.055B MPR100.0625B MPR100.0685B MPR100.115B |
RESISTOR, CURRENT SENSE, METAL STRIP, 10 W, 5 %, 350 ppm, 0.05 ohm, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
RESISTOR, CURRENT SENSE, METAL STRIP, 10 W, 5 %, 350 ppm, 0.062 ohm, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
RESISTOR, CURRENT SENSE, METAL STRIP, 10 W, 5 %, 350 ppm, 0.068 ohm, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
RESISTOR, CURRENT SENSE, METAL STRIP, 10 W, 5 %, 350 ppm, 0.11 ohm, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
RESISTOR, CURRENT SENSE, METAL STRIP, 10 W, 5 %, 350 ppm, 0.39 ohm, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
RESISTOR, CURRENT SENSE, METAL STRIP, 10 W, 5 %, 350 ppm, 0.91 ohm, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
|
Stackpole Electronics, Inc.
|
| ERX-12SJ2R4 ERX-12SJ2R2V ERG-2SJ431V ERG-2SJ431A E |
RESISTOR, METAL OXIDE FILM, 0.5 W, 5 %, 350 ppm, 100 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, METAL OXIDE FILM, 2 W, 5 %, 350 ppm, 100 ohm, THROUGH HOLE MOUNT AXIAL LEADED
|
Panasonic, Corp.
|
| APT6035SVR APT10088HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 600V 18A 0.350 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| MJ10000 |
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS 20 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AA
|
Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola Inc]
|
| TAN350 |
350 Watts, 50 Volts, Pulsed Avionics 960 1215 MHz 350瓦，50伏特，脉冲航空电601215兆赫
TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 350; P(in) (W): 70; Gain (dB): 7; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
350 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz
|
Electronic Theatre Controls, Inc.
Microsemi, Corp.
ETC[ETC]
List of Unclassifed Manufacturers
|
|
