| PART |
Description |
Maker |
| FZT853 |
Extremely low equivalent on-resistance; RCE(sat) 44mù at 5A, 6 Amps continuous current, up to 20 Amps peak current
|
TY Semiconductor Co., Ltd
|
| PMV56XN PMV56XN-01 |
uTrenchMOS (tm) extremely low level FET
From old datasheet system
mTrenchMOS extremely low level FET
|
Philips
|
| PMG370XN |
N-channel uTrenchmos (tm) extremely low level FET
N-channel mTrenchMOS extremely low level FET
From old datasheet system
|
NXP Semiconductors
Philips Semiconductors
|
| PMV31XN PMV31XN-01 |
uTrenchMOS (tm) extremely low level FET
UTrenchMOS extremely low level FET
From old datasheet system
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PMWD20XN |
Dual N-channel microTrenchMOS(tm) extremely low level FET
DUAL N-CHANNEL UTRENCHMOS EXTREMELY LOW LEVEL FET
|
NXP Semiconductors
Philips Semiconductors
|
| STY16NA90 6004 |
N - CHANNEL 900V - 0.5 ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
From old datasheet system
N - CHANNEL 900V - 0.5 - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| UR5HC703 |
Extremely Low-Power Keyboard Encoder(???????????????
|
Semtech Corporation
|
| PMV56XN |
UTrenchMOS extremely low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| DTP9531 DTP953113 |
P-Channel 30 V (D-S) MOSFET Extremely low RDS(on)
|
DinTek Semiconductor Co,.Ltd
|
| GFC244 |
N Channel Power MOSFET with extremely low RDS(on)
|
Gunter Seniconductor GmbH.
|
| STB28N60DM2 |
Extremely low gate charge and input capacitance
|
STMicroelectronics
|
| PMZ250UN |
N-channel TrenchMOS extremely low level FET
|
NXP Semiconductors N.V.
|
