PART |
Description |
Maker |
DC1282G DC1282H |
12 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
|
|
ATF-13100 ATF-13100-GP3 |
2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET) 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管(2-18 GHz的低噪声砷化镓场效应管)
|
HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
ATF-21170 |
0.5-6 GHz Low Noise Gallium Arsenide FET
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
DGSK40-025A |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB
|
IXYS, Corp.
|
DGS9-03AS DGS10-03A |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
|
IXYS, Corp. IXYS[IXYS Corporation]
|
ATF13284TR2 ATF-13284 ATF-13284-STR ATF-13284-TR1 |
1-16 GHz Low Noise Gallium Arsenide FET 1-16 GHz的低噪声砷化镓场效应
|
Agilent(Hewlett-Packard... HP[Agilent(Hewlett-Packard)]
|
MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT Gallium Arsenide PHEMT
|
MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
DGS20-022A DGSK40-025A DGS20-025A DGSK40-022A |
250V gallium arsenide schottky rectifier 220V gallium arsenide schottky rectifier
|
IXYS[IXYS Corporation]
|
DGS20-015A DGS20-018A |
150V gallium arsenide schottky rectifier 180V gallium arsenide schottky rectifier
|
IXYS
|
DMK3379-000-295-011 DMK3248-000-417-001 |
GALLIUM ARSENIDE, KU BAND, MIXER DIODE GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
|