| PART |
Description |
Maker |
| SGM2014 SGM2014AM |
GaAs N-channel Dual Gate MES FET
GaAs N-channel Dual Gate MES FET
|
SONY[Sony Corporation]
|
| 3SK147 |
GAAS N-CHANNEL DUAL-GATE MES FET
|
Sony Corporation
|
| NE76118-T2 NE76118-T1 NE76118 |
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| SGM2016AN SGM2016 |
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
|
| NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册，S波段功率GaAs场效应晶体管
0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE960R575 NE960R500 NE960R5 NE961R500 NE962R575 |
0.5 W X, Ku-BAND POWER GaAs MES FET
0.5 W X Ku-BAND POWER GaAs MES FET
|
NEC[NEC]
|
| NES1823P-30 |
30 W L-S BAND PUSH-PULL POWER GaAs MES FET
|
NEC[NEC]
|
| NES2427P-60 |
60 W S-BAND PUSH-PULL POWER GaAs MES FET
|
NEC Corp.
|
| NES1823P-140 |
140 W L, S-BAND PUSH-PULL POWER GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| GN1022 |
GaAs N Channel MES Type IC
|
Matsushita Electric Works(Nais)
Panasonic Semiconductor
|
| FHX06X FHX04X FHX05X |
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
GaAs FET & HEMT Chips
|
Eudyna Devices Inc
Fujitsu Media Devices Limited
|
