| PART |
Description |
Maker |
| 2SK3325 |
Low gate charge: QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)
|
TY Semiconductor Co., Ltd
|
| 2SK3458 |
Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
|
TY Semiconductor Co., Ltd
|
| 2SK3668 |
Low gate charge QG= 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A)
|
TY Semiconductor Co., Ltd
|
| STL28NF3LL |
N-CHANNEL 30V - 0.0055ohm - 28A PowerFLATLOW GATE CHARGE STripFETMOSFET
N-CHANNEL 30V - 0.0055ohm - 28A PowerFLAT LOW GATE CHARGE STripFET MOSFET
N-CHANNEL 30V - 0.0055ohm - 28A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩ MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| STB90NF03L STB90NF03LT4 |
N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 30V - 0.0056ohm - 90A D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
N-CHANNEL 30V - 0.0056ohm - 90A D2PAK LOW GATE CHARGE STripFET POWER MOSFET
Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:68uF; Capacitance
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| STL22NF10 |
N-CHANNEL 100V - 0.055 ohm - 22A PowerFLATLOW GATE CHARGE STripFETII MOSFET
N-CHANNEL 100V - 0.055 ohm - 22A PowerFLAT LOW GATE CHARGE STripFET II MOSFET
N-CHANNEL 100V - 0.055 ohm - 22A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩ II MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| STS5N150 9639 |
N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET?/a> POWER MOSFET
N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET?/a> POWER MOSFET
N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET⑩ POWER MOSFET
N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFETPOWER MOSFET
N-CHANNEL POWER MOSFET
From old datasheet system
|
STMicroelectronics
意法半导
ST Microelectronics
|
| IXFH52N30Q IXFK52N30Q IXFT52N30Q |
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
From old datasheet system
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances 52 A, 300 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| SKDH146-L100 SKDH146_12-L100 SKDH146_16-L100 SKDH1 |
MOSFET; ID (A): 0.03; VDS (V): 6; Pch : 0.25; |yfs| (S) typ: 29/29; PG (dB) typ: 30/30; Ciss (pF) typ: 2.1/2.1; NF (dB) typ: 1.1/1.1; IDSS (mA): Package: CMPAK-6
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| STD22NM20N05 STD22NM20N STD22NM20NT4 |
N-CHANNEL 200V - 0.088Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh II MOSFET
N-CHANNEL 200V - 0.088ヘ - 22A DPAK ULTRA LOW GATE CHARGE MDmesh⑩ II MOSFET
N-CHANNEL 200V - 0.088Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh?/a> II MOSFET
|
STMicroelectronics
|
