PART |
Description |
Maker |
2SA1434 |
Adoption of FBET process. High DC current gain (hFE=500 to 1200).
|
TY Semiconductor Co., L...
|
2SA1724 |
High fT (fT = 1.5GHz typ). High Current (IC = 300mA). Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
2SA1575 |
High fT. High breakdown voltage. Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
2SA1417 |
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semiconductor Co., Ltd
|
2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor Bipolar Transistor Adoption of FBET, MBIT processes Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
2SC4003 |
High breakdown voltage Adoption of MBIT process Excellent hFE linearity
|
TY Semiconductor Co., Ltd
|
CP392V |
Smal Signal Transistor NPN - Amp/Switch Transistor Chip
|
Central Semiconductor
|
CP392V10 |
Smal Signal Transistor NPN - Amp/Switch Transistor Chip
|
Central Semiconductor Corp
|
VTB5041B VTB5040B |
VTB Process Photodiodes 俄罗斯外贸银行的过程光电二极 VTB Process Photo Diodes
|
List of Unclassifed Manufacturers Electronic Theatre Controls, Inc. ETC[ETC] Perkin Elmer Optoelectronics
|
VTB5041J VTB5040J |
VTB Process Photodiodes 俄罗斯外贸银行的过程光电二极 VTB Process Photo Diodes
|
List of Unclassifed Man... List of Unclassifed Manufacturers ETC[ETC] Electronic Theatre Controls, Inc. Perkin Elmer Optoelectronics
|
IRF7101PBF IRF7101TRPBF IRF7101PBF-15 |
ADVANCED PROCESS TECHNOLOGY HEXFET? Power MOSFET HEXFET㈢ Power MOSFET Adavanced Process Technology
|
IRF[International Rectifier]
|