| PART |
Description |
Maker |
| UPD5739T7A UPD5739T7A-E1-A |
SiGe/CMOS Integrated Circuit 4×2 IF Switch Matrix with Gain and Tone/Voltage Controller
|
Renesas Electronics Corporation
|
| UPC3245TB |
SiGe BiCMOS Integrated Circuit
|
Renesas
|
| TC55V11601FT-15 |
16,777,216-WORD BY 1-BIT CMOS STATIC RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC51WHM616AXBN65 TC51WHM616AXBN70 |
4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC55VCM216ASTN40 TC55VCM216ASTN55 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山暂定东芝数字集成电路硅栅CMOS
512-MBIT (64M x 8 BITS) CMOS NAND E2PROM
|
Toshiba, Corp.
|
| MWA02011L MWA0204 MWA0270 MWA0211L |
I(cc): 40mA; P(in): -16 dB; V(cc): 6V; monolithic microwave integrated circuit
MONOLITHIC MICROWAVE INTEGRATED CIRCUIT 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
(MWA02011L / MWA0204 / MWA0270) MONOLITHIC MICROWAVE INTEGRATED CIRCUIT
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| AC74HC40105AP TC74HC40105AF AC74HC697AP |
CMOS DIGITAL INTEGRATED CIRCUIT
|
TOSHIBA[Toshiba Semiconductor]
|
| NTE1208 |
Integrated Circuit CMOS, Phase Comparator
|
NTE[NTE Electronics]
|
| UPD5555 UPD5555C UPD5555G2 D5555C |
CMOS Timer
MOS INTEGRATED CIRCUIT
|
NEC Electronics
NEC[NEC]
|
| TC9482N TC9482F |
CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
Toshiba Semiconductor
|
