| PART |
Description |
Maker |
| RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| STB45NF3LL STP45NF3LL STP45NF3LLFP STB45NF3LLT4 |
45 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET
N-CHANNEL 30V - 0.014ohm - 45A TO-220 - TO220FP - D2PAK STripFET II⑩ POWER MOSFET
N-CHANNEL 30V - 0.014ohm - 45A TO-220 - TO220FP - D2PAK STripFET II POWER MOSFET
N-CHANNEL 30V 0.014 OHM 45A TO-220/TO-220FP/D2PAK STRIPFET II POWER MOSFET
N-CHANNEL 30V 0.014 OHM 45A TO-220/TO-220FP/D2PAK STRIPFET II POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| 30LJQ045 |
30V 45A Hi-Rel Schottky Discrete Diode in a SMD-0.5 package
SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
| FMC7G20US60 |
IGBT
Compact & Complex Module
Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| IRF3708 IRF3708L IRF3708S |
Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET（减振钢板基本\u003d 30V的，的Rdson）最大值\u003d 12mohm，身份证\u003d 62A条）
Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| DTD723YE09 DTD723YM |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| DTD723YM DTD723YE |
200mA / 30V Low VCE (sat) Digital transistors(with built-in resistors)
|
Rohm
|
| DTB723YM DTB723YE |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
ROHM[Rohm]
|
| DTD713ZM DTD713ZE |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| DTB743EE09 |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
