| PART |
Description |
Maker |
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
| K521F12ACD-B060 |
1Gb (128M x8) NAND Flash 512Mb (32M x16) Mobile DDR SDRAM
|
Samsung
|
| M58LW064 M58LW064A M58LW064A150NF1T M58LW064A150NF |
64 Mbit x16 and x16/x32 / Block Erase Low Voltage Flash Memories
64 Mbit (x16 and x16/x32, Block Erase) Low Voltage Flash Memories
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
|
ST Microelectronics
SGS Thomson Microelectronics
|
| MB84VD23381HJ-70PBS MB84VD23381HJ MB84VD23381HJ-70 |
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
|
SPANSION[SPANSION]
|
| MT47H32M16CC3B |
512Mb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
| W989D6CBGX6E W989D6CBGX6I W989D6CBGX7E W989D2CBJX6 |
512Mb Mobile LPSDR
|
Winbond
|
| K4X56323PG K4X56323PG-7EC3 K4X56323PG-7ECA K4X5632 |
8M X32 MOBILE-DDR SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| KBE00F005A-D411 |
512Mb NAND*2 256Mb Mobile SDRAM*2
|
Samsung Electronic
|
| H5MS1G22MFP-L3M H5MS1G32MFP-L3M H5MS1G22MFP-E3M H5 |
1Gbit MOBILE DDR SDRAM based on 8M x 4Bank x32 I/O
|
Hynix Semiconductor
|
| W987D6CKJX5G W947D6CKJX5G W989D6CKJX5G W949D6CKJX5 |
512Mb Mobile LPSDR
512Mb Mobile LPSDR
|
Winbond
|
| H55S1222EFP-60E H55S1222EFP-60M H55S1222EFP-75E H5 |
128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
4M X 32 STATIC COLUMN DRAM, 5.4 ns, PBGA90
|
HYNIX SEMICONDUCTOR INC
|
| K4X51163PC-FE K4X51163PC-LE |
32M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
