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HSM88WA - MPAK package is suitable for high density surface mounting and high speed assembly

HSM88WA_7227575.PDF Datasheet


 Full text search : MPAK package is suitable for high density surface mounting and high speed assembly
 Product Description search : MPAK package is suitable for high density surface mounting and high speed assembly


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PART Description Maker
HSM88ASR MPAK package is suitable for high density surface mounting and high speed assembly
TY Semiconductor Co., Ltd
VN340SPTR-E VN340SP-E -VN340SP-E Zener Diode; Application: General; Pd (mW): 200; Vz (V): 6.06 to 6.33; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 6.26 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 四高端智能电源固态继电器
Quad high side smart Power solid state relay
EPCOS AG
STMicroelectronics
TMP47C102M TMP47C202P Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.42 to 4.61; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.84 to 5.37; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 的CMOS 4位微控制
Toshiba Corporation
Toshiba, Corp.
TMP19A64F20AXBG Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.30 to 2.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
Toshiba Corporation
TMP86C407MG Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 21.77; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
Toshiba Corporation
12CWQ03FNTR 12CWQ03FNPBF 12CWQ03FNTRL 12CWQ03FNTRL SCHOTTKY RECTIFIER 12 Amp 肖特基整流器12安培
Zener Diode; Application: Surge absorption; Pd (mW): 200; Vz (V): 6.47 to 7.0; Condition Iz at Vz (mA): 5; C (pF) max: 25; Condition VR at C (V): 0; ESD (kV) min: 20; Package: MPAK
International Rectifier, Corp.
SKDH11507 SKDH115/12 Transistor; Type: Amplifiers/Bipolar; VCEO (V): 5; Ic (A): 0.5; hFE: 110 to 190; fT (GHz) typ: 10.5; Cob (pF) max: 2; Package: MPAK 1200 V, SCR
Half Controlled 3-phase Bridge Rectifier
Semikron International
HSU277 Low forward resistance Ultra small Resin Package (URP) is suitable for surface mount design
TY Semiconductor Co., L...
REC15-XX12SZ/H/M REC15-XX3.4S/H/M REC15-XX3.4SZ/H/ The REC15-xxxxS_D/M -series offer single and dual regulated outputs in a 2”x1 package with 2kVDC or 3kVDC isolation options and are suitable for higher power industrial applications.
   The REC15-xxxxS_D/M -series offer single and dual regulated outputs in a 2”x1?package with 2kVDC or 3kVDC isolation options and are suitable for higher power industrial applications.
Recom International Power
Recom International Pow...
1SMAF4728A    Small plastic package suitable for surface mounted design
SHIKE Electronics
SKD146-L100 SKD146_12-L100 SKD146_16-L100 SKD146/1 Transistor; Type: Amplifiers/Bipolar; VCEO (V): 12; Ic (A): 0.075; Pc (W): 0.7; hFE: 100 to 200; fT (GHz) typ: 7.8; Cob (pF) max: 0.9; NF (dB) typ: 1; Package: MPAK
Transistor; Type: Amplifiers/Bipolar; VCEO (V): 4; Ic (A): 0.035; Pc (W): 0.05; hFE: 70 to 150; fT (GHz) typ: 20; Cob (pF) max: 0.15; NF (dB) typ: 1.15; Package: CMPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
Semikron International
S6968-01 MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
Hamamatsu Photonics
 
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