| PART |
Description |
Maker |
| TC8104M32-102A1-01 |
1M X 32 MULTI DEVICE DRAM CARD, 100 ns, XMA88
|
OKI ELECTRIC INDUSTRY CO LTD
|
| AEPDH4M8LB-10P |
4M X 8 MULTI DEVICE DRAM MODULE, 100 ns, SMA28 SIMM-28
|
Fox Electronics
|
| HYB18RL25616AC-4 HYB18RL25616AC-5 HYB18RL25632AC-5 |
16M X 16 DDR DRAM, PBGA144
Specialty DRAMs - 256M (8Mx32) 200MHz
Specialty DRAMs - 256M (16Mx16) 200MHz
Specialty DRAMs - 256M (16Mx16) 250MHz
|
INFINEON TECHNOLOGIES AG
|
| HY5TQ1G431ZNFP-H8 HY5TQ1G431ZNFP-H7 HY5TQ1G431ZNFP |
256M X 4 DDR DRAM, 0.255 ns, PBGA82 FBGA-82
256M X 4 DDR DRAM, 0.225 ns, PBGA82 FBGA-82
64M X 16 DDR DRAM, 0.3 ns, PBGA100
64M X 16 DDR DRAM, 0.255 ns, PBGA100
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| HMP125S6EFR8C-C4 HMP125S6EFR8C-S5 HMP125S6EFR8C-S6 |
256M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
200pin Unbuffered DDR2 SDRAM SO-DIMMs
|
HYNIX SEMICONDUCTOR INC
Hynix Semiconductor, Inc.
|
| HY5PS1G1631CLFP-Y5I HY5PS1G431CLFP-Y5I HY5PS1G1631 |
64M X 16 DDR DRAM, PBGA84
256M X 4 DDR DRAM, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| M2V56S40TP M2V56S20TP-6 M2V56S20TP M2V56S20 |
256M Synchronous DRAM
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M393B5673GB0-CF8 |
256M X 72 DDR DRAM MODULE, 20 ns, DMA240
|
|
| EBJ21EE8BAWA-DG-E |
256M X 72 DDR DRAM MODULE, DMA240
|
ELPIDA MEMORY INC
|
