| PART |
Description |
Maker |
| CXK77P36E160GB-43BE CXK77P18E160GB-4BE CXK77P18E16 |
1M X 18 STANDARD SRAM, 3.7 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 3.8 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.1 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) 16Mb的龙运RL HSTL高速同步静态存储器（为512k × 3600万18
CAP 820PF 50V 20% X7R SMD-0603 TR-7 PLATED-NI/SN
|
http://
Yuasa Battery, Inc.
Integrated Circuit Technology Corp
Microsemi, Corp.
Sony, Corp.
Sony Corporation
|
| FDZ4670 |
N-Channel PowerTrench?MOSFET BGA 30V, 25A, 2.5mΩ
N-Channel PowerTrench㈢MOSFET BGA 30V, 25A, 2.5mヘ
|
Fairchild Semiconductor
|
| FDZ291P06 FDZ291P |
P-Channel 1.5 V Specified PowerTrench? BGA MOSFET
P-Channel 1.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDZ293P06 FDZ293P |
P-Channel 2.5 V Specified PowerTrench? BGA MOSFET
P-Channel 2.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IBM25PPC440GX-3FB533C IBM25PPC440GX-3CB533C IBM25P |
32-BIT, 533 MHz, RISC PROCESSOR, PBGA552 25 X 25 MM, FLIP CHIP, PLASTIC, BGA-552
32-BIT, 533 MHz, RISC PROCESSOR, CBGA552 25 X 25 MM, CERAMIC, BGA-552
32-BIT, 667 MHz, RISC PROCESSOR, CBGA552 25 X 25 MM, CERAMIC, BGA-552
|
Mitsubishi Electric, Corp.
|
| IBM25PPC405GP-3BE266C IBM25PPC405GP-3EE200C IBM25P |
MICROPROCESSOR|32-BIT|CMOS|BGA|413PIN|PLASTIC
MICROPROCESSOR|32-BIT|CMOS|BGA|456PIN|PLASTIC 微处理器| 32位|的CMOS | BGA封装| 456PIN |塑料
|
Jameco Electronics
Mitel Networks, Corp.
|
| TSC51C2XXX-12IB TSC51C2XXX-16IB TSC51C2XXX-A12IB T |
IC MAX 7000 CPLD 512 208-PQFP
IC MAX IIZ CPLD 570 LE 256-MBGA
IC MAX 7000 CPLD 512 256-FBGA
484-pin FineLine BGA RoHS Compliant: Yes
956-pin BGA RoHS Compliant: Yes
IC,FPGA,32470-CELL,CMOS,BGA,1020PIN,PLASTIC
FPGA Logic IC Logic Type:FPGA; No. of Macrocells:726; Package/Case:1020-BGA; Leaded Process Compatible:No; Number of Circuits:32;
IC,FPGA,4800-CELL,CMOS,BGA,484PIN,PLASTIC
IC,FPGA,10570-CELL,CMOS,BGA,672PIN,PLASTIC
IC,FPGA,14400-CELL,CMOS,BGA,780PIN,PLASTIC
No. of Macrocells:192; No. of Pins:68; Operating Temp. Max:85°C; Operating Temp. Min:0°C; Propagation Delay:7.5ns RoHS Compliant: Yes;
No. of Macrocells:192; No. of Pins:100; Operating Temp. Max:85°C; Operating Temp. Min:0°C; Propagation Delay:7.5ns RoHS Compliant: Yes;
No. of Macrocells:160; No. of Pins:84; Operating Temp. Max:70 C; Operating Temp. Min:0 C; Propagation Delay:10ns RoHS Compliant: Yes;
No. of Macrocells:440; No. of Pins:100; Operating Temp. Max:85°C; Operating Temp. Min:0°C; Propagation Delay:9ns RoHS Compliant: Yes;
8-BIT MICROCONTROLLER 8位微控制
IC MAX 7000 CPLD 128 100-PQFP 8位微控制
IC MAX 7000 CPLD 160 84-PLCC 8位微控制
|
TE Connectivity, Ltd.
Diodes, Inc.
Semtech, Corp.
|
| IBM25PPC405EP-3GB200C IBM25PPC405EP-3GB133C IBM25P |
32-BIT, 200 MHz, RISC PROCESSOR, PBGA385 31 MM, ENHANCED, PLASTIC, BGA-385
32-BIT, 133.33 MHz, RISC PROCESSOR, PBGA385 31 MM, ENHANCED, PLASTIC, BGA-385
32-BIT, 333.33 MHz, RISC PROCESSOR, PBGA385 31 MM, ENHANCED, PLASTIC, BGA-385
32-BIT, 266.66 MHz, RISC PROCESSOR, PBGA385 31 MM, ENHANCED, PLASTIC, BGA-385
|
Electronic Theatre Controls, Inc.
|
| EPM7512AEBC256-10 EPM7256AEFC100-10 |
COMPLEX-EEPLD,512-CELL,10NS PROP DELAY,BGA,256PIN,PLASTIC
COMPLEX-EEPLD,256-CELL,10NS PROP DELAY,BGA,100PIN,PLASTIC
|
Altera Corp
|
| K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7 |
SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36
128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36
256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119
SENSOR DIFF VACUUM GAGE 1PSI
SENSOR ABSOLUTE 0-15PSIA
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K7P401823B-HC650 K7P401823B-HC750 K7P403623B |
256K X 18 STANDARD SRAM, 6.5 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 7.5 ns, PBGA119 14 X 22 MM, BGA-119
128Kx36 & 256Kx18 SRAM
|
Samsung semiconductor
|
|
