| PART |
Description |
Maker |
| 2SC4601 |
Surface mount type device making the following possible. Adoption of MBIT process.
|
TY Semiconductor Co., Ltd
|
| 2SA1580 |
High fT. Small reverse transfer capacitance. Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
| 2SC3645 |
High-Voltage Switching Applications
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SC4695 |
Adoption of FBET process. Small ON resistance [Ron=1W (IB=5mA)].
|
TY Semiconductor Co., Ltd
|
| 2SC4413 |
Adoption of FBET process. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SB1122 |
Adoption of FBET process Very small size making it easy to provide highdensity hybrid ICS
|
TY Semiconductor Co., L...
|
| 2SC5310 |
NPN Epitaxial Planar Silicon Transistors
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SB1302 SB1302 |
PNP Epitaxial Planar Silicon Transistors
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| M36W0R6040B3ZAQE M36W0R6050B3 M36W0R6050B3ZAQE M36 |
64-Mbit (4 Mbits ×16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit ×16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
http://
|
| SST39LF400A SST39LF200A |
(SST39xF200A/400A/800A) 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
|
Silicon Storage Technology
|
| SST39LF010-45-4C-B3KE SST39LF010-45-4C-MM SST39LF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
SST[Silicon Storage Technology, Inc]
|
