| PART |
Description |
Maker |
| 2SC2881 |
Voltage Amplifier Applications
High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz(typ.)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| KSC2881 |
Collector-Emitter Voltage : VCEO=120V
|
TY Semiconductor Co., Ltd
|
| 2SC3906K 2SC4102 2SC2389S |
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
High-voltage Amplifier Transistor(120V 50mA)
Transistors
TRANSISTOR|BJT|NPN|120VV(BR)CEO|50MAI(C)|SOT-23VAR
High-voltage Amplifier Transistor(120V/ 50mA)
High-voltage Amplifier Transistor(120V, 50mA) 高电压放大器晶体管（120伏特0mA的）
|
Toshiba Semiconductor
ROHM[Rohm]
Rohm Co., Ltd.
|
| CSA965Y CSA965O CSC2235O |
0.900W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.800A Ic, 120 - 240 hFE
0.900W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.800A Ic, 80 - 240 hFE
0.900W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.800A Ic, 80 - 160 hFE
0.900W General Purpose NPN Plastic Leaded Transistor. 120V Vceo, 0.800A Ic, 80 - 160 hFE
|
Continental Device India Limited
|
| 2SC3645 |
High-Voltage Switching Applications
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| CSC184E |
0.500W General Purpose NPN Plastic Leaded Transistor. 120V Vceo, 0.050A Ic, 400 - 800 hFE
|
Continental Device India Limited
|
| 2SC3360 |
High DC current gain.hFE=90 to 450 High voltage VCEO=200V
|
TY Semiconductor Co., Ltd
|
| LMBTA44LT1G |
NPN EPITAXIAL PLANAR TRANSISTOR High Breakdown Voltage: VCEO=400
|
Leshan Radio Company
|
| 2SC4849 |
HIGH-VOLTAGE SWITCHING TRANSISTOR (POWER SUPPLY) ( 120V/ 7A)
|
ROHM
|
| BD115 |
0.875W High Voltage NPN Metal Can Transistor. 180V Vceo, 0.200A Ic, 22 hFE.
|
Continental Device India Limited
|
