| PART |
Description |
Maker |
| CSC2240 CSA970 CSA970BL CSA970GR |
0.300W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.100A Ic, 200 - 400 hFE
0.300W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.100A Ic, 350 - 700 hFE
CSA 970 PNP SILICON PLANAR EPITAXIAL TRANSISTORS, CSC 2240 NPN SILICON PLANAR EPITAXIAL TRANSISTORS
|
CDIL[Continental Device India Limited]
|
| CSC2611 |
1.250W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.100A Ic, 30 - 200 hFE.
HIGH VOLTAGE AMPLIFIER AND TV VIDEO OUTPUT
|
Continental Device India Limited
|
| 74HC HCMOS 74HCT 74HCU |
: Conductor AWG#18 to #22; Termination Style: Crimping; Current Rating(Amps)(Max.): 5; Contact Mating Area Plating: Palladium; Operating Temperature
Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:100V; Transistor Polarity:N Channel; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):30; Package/Case:R245; Collector Base Voltage:120V
HCMOS family characteristics
|
Philips Semiconductors
NXP Semiconductors
|
| 2SA1200 |
High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz(typ.)
|
TY Semiconductor Co., Ltd
|
| 2SC3360 |
High DC current gain.hFE=90 to 450 High voltage VCEO=200V
|
TY Semiconductor Co., Ltd
|
| 2SC2946 |
High Votage VCEO=200V High speed tf us Collector to base voltage VCBO 330 V
|
TY Semiconductor Co., Ltd
|
| 2SC4615 |
Large current calcity (IC=1A) High blocking voltage(VCEO 400V)
|
TY Semiconductor Co., Ltd
|
| LMBTA44LT1G |
NPN EPITAXIAL PLANAR TRANSISTOR High Breakdown Voltage: VCEO=400
|
Leshan Radio Company
|
| FCX705 FCX705TA |
120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
|
Diodes Incorporated
|
| AME385-25 AME385BEAS AME385BEAT AME385DEHA AME385B |
Micropower Voltage Reference Diode 微功耗电压基准二极管
OPTOISO W/O BASE HIGH VCEO 6-DIP
|
AME, Inc.
AME[Analog Microelectronics]
|
