| PART |
Description |
Maker |
| W29EE012 W39L020P-70 W39L020P-70B W39L020P-90 W39L |
128K X 8 FLASH 5V PROM, 90 ns, PQCC32
128K X 8 FLASH 5V PROM, 90 ns, PDSO32
128K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 3.3V PROM, 90 ns, PDSO32
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| AT29BV010A-30JCT/R AT29BV010A-30TCT/R AT29BV010A-2 |
128K X 8 FLASH 3V PROM, 300 ns, PQCC32
128K X 8 FLASH 3V PROM, 300 ns, PDSO32
128K X 8 FLASH 3V PROM, 250 ns, PQCC32
128K X 8 FLASH 3V PROM, 200 ns, PDSO32
|
ATMEL CORP
|
| M29F200FB55N6F2 M29F800FB55N3F2 M29F800FB55N3S2 M2 |
128K X 16 FLASH 5V PROM, 55 ns, PDSO48
512K X 16 FLASH 5V PROM, 55 ns, PDSO48
1M X 16 FLASH 5V PROM, 55 ns, PDSO48
128K X 16 FLASH 5V PROM, 55 ns, PDSO44
256K X 16 FLASH 5V PROM, 55 ns, PDSO48
|
NUMONYX
|
| M28F1001-12C313 M28F1001-12C113 M28F1001-12C312 M2 |
128K X 8 FLASH 12V PROM, 120 ns, PQCC32 PLASTIC, LCC-32
128K X 8 FLASH 12V PROM, 150 ns, CDIP32
128K X 8 FLASH 12V PROM, 150 ns, PQCC32
128K X 8 FLASH 12V PROM, 120 ns, CDIP32
|
ST Microelectronics
STMICROELECTRONICS
|
| TP28F010-90 TE28F010-150 |
28F010 1024K (128K X 8) CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
28F010 1024K (128K X 8) CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
|
Intel, Corp.
|
| V29C31001T-55TIND V29C51001T-55J |
128K X 8 FLASH 3V PROM, 55 ns, PDSO32
128K X 8 FLASH 5V PROM, 55 ns, PQCC32
|
MOSEL-VITELIC
|
| SST27SF512-70-3C-NHE SST27SF010-70-3C-PHE SST27SF0 |
64K X 8 FLASH 12V PROM, 70 ns, PQCC32
128K X 8 FLASH 12V PROM, 70 ns, PDIP28
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash
|
SILICON STORAGE TECHNOLOGY INC
|
| SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| IS28F010-45PL IS28F010-45PLI IS28F010-45T IS28F010 |
131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 45 ns, PDSO32
131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 45 ns, PQCC32
131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 45 ns, PDIP32
|
INTEGRATED SILICON SOLUTION INC
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| W39L010P-90 W39L010P-70 W39L010Q-90 W39L010Q-90B W |
128K X 8 CMOS FLASH MEMORY 128K X 8 FLASH 3.3V PROM, 70 ns, PQCC32
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
|
