| PART |
Description |
Maker |
| RGTV00TS65 |
650V 50A Field Stop Trench IGBT
|
Rohm
|
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
| 10-FY074PA050SM-M582F38 |
650V IGBT H5 and 650V Stealth Si diode
|
Vincotech
|
| FGA50N100BNTD |
1000V, 50A NPT-Trench IGBT CO-PAK 50 A, 1000 V, N-CHANNEL IGBT
|
Fairchild Semiconductor, Corp.
|
| FGPF50N33BT FGPF50N33BTTU |
50 A, 330 V, N-CHANNEL IGBT, TO-220AB GREEN, TO-220F, 3 PIN
330V, 50A PDP IGBT
|
Fairchild Semiconductor
|
| MBF15T65PEH |
650V Field Stop IGBT
|
MagnaChip Semiconductor...
|
| FGA50N100BNT FGA50N100BNTTU |
1000V, 50A NPT Trench IGBT
1000V, 50A NPT-Trench IGBT CO-PAK
|
Fairchild Semiconductor
|
| FGH40N65UFD |
650V, 40A, Field Stop IGBT
|
Fairchild Semiconductor
|
| FGH75T65UPD |
650V, 75A Field Stop Trench IGBT
|
Fairchild Semiconductor
|
| RGTH80TS65GTL |
650V 40A Field Stop Trench IGBT
|
ROHM
|
| STGY40NC60VD STGY40NC60V |
N-CHANNEL 50A - 600V MAX247 VERY FAST POWERMESH" IGBT
N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH IGBT
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:220uF; Capacitance
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
