| PART |
Description |
Maker |
| ADM1818-10AKS-REEL ADM1818-20AKS-REEL ADM1818-10AK |
Microprocessor Supervisory in SOT-23 with Manual Push Button Option
Microprocessor Supervisory in SOT-23 with Open Drain Output Choices
Microprocessor Supervisory in SOT-23 with Active High Push-Pull Output
|
Analog Devices
|
| P4C1258-25CMB P4C1258L-25CMB P4C1258-45LMB P4C1258 |
VOLTAGE DETECTOR W/OPEN DRAIN ACTIVE LOW OUTPUT & Oms TIMEOUT, -40C to 125C, 5-SOT-23, T/R
Micro Power Voltage detector, w/push pull active low, -40C to 125C, 5-SOT-23, T/R
VOLTAGE DETECTOR W/PUSH PULL ACTIVE LOW OUTPUT & Oms TIMEOUT, -40C to 125C, 5-SOT-23, T/R
VOLTAGE DETECTOR W/PUSH-PULL ACTIVE LOW OUTPUT & 0ms TIMEOUT, -40C to 125C, 4-SOT-143, T/R
VOLTAGE DETECTOR W/OPEN DRAIN ACTIVE LOW OUTPUT & 2ms TIMEOUT, -40C to 125C, 5-SOT-23, T/R
MICRO POWER VOLTAGE DETECTOR, W/OPEN DRAIN, ACTIVE LOW, -40C to 125C, 5-SOT-23, T/R
VOLTAGE DETECTOR W/OPEN DRAIN ACTIVE LOW OUTPUT & 0ms TIMEOUT, -40C to 125C, 4-SOT-143, T/R
VOLTAGE DETECTOR W/PUSH-PULL ACTIVE LOW OUTPUT & 2ms TIMEOUT, -40C to 125C, 4-SOT-143, T/R
MICTO POWER VOLTAGE DETECTOR, W/ACTIVE DRAIN, ACTIVE LOW, -40C to 125C, 5-SOT-23, T/R
VOLTAGE DETECTOR W/OPEN DRAIN ACTIVE LOW OUTPUT & 2ms TIMEOUT, -40C to 125C, 4-SOT-143, T/R
VOLTAGE DETECTOR W/PUSH PULL ACTIVE LOW OUTPUT & 2ms TIMEOUT, -40C to 125C, 5-SOT-23, T/R
VOLTAGE DETECTOR W/PUSH-PULL ACTIVE HIGH OUTPUT & 0ms TIMEOUT, -40C to 125C, 4-SOT-143, T/R x4的SRAM
MICRO POWER VOLTAGE DETECTOR, W/OPEN DRAIN ACTIVE LOW, -40C to 125C, 4-SOT-143, T/R x4的SRAM
VOLTAGE DETECTOR W/OPEN DRAIN ACTIVE LOW OUTPUT & 2ms TIMEOUT, -40C to 125C, 5-SOT-23, T/R x4的SRAM
x4 SRAM x4的SRAM
|
Unisonic Technologies Co., Ltd.
Pyramid Semiconductor, Corp.
|
| IRF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A.
|
General Electric Solid State
|
| 5962R9663401VEC |
Open-Drain SOT µP Reset Circuit 简型锁
|
Intersil, Corp.
|
| ADM6315-26D3ARTZR7 ADM6315-26D4ART-RL |
Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143
|
Analog Devices
|
| NTF6P02T3 NTF6P02T3-D NTF6P02T3G NTF6P02T3/D |
Receptacle With A Wire Wrap Tail NTF6P02T3
Power MOSFET -6.0 Amps, -20 Volts P?Channel SOT23(-6.0A,-20V，P通道，SOT-23封装的功率MOSFET) 10 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET -6.0 Amps, -20 Volts P??annel SOT?23
Power MOSFET -6.0 Amps, -20 Volts P-Channel SOT-223
20V P-ch HD3e SOT223
|
ONSEMI
ON Semiconductor
|
| HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B |
NOR GATE
(289.19 k)
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6A I(D),TO-3 RoHS Compliant: Yes
T-PNP-SI-AF PO- .75W
T-NPN- SI-PO & SW-PD 40 W 或非
MOSFET-PWR N-CH HI SPEED 或非
MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:10.5A; On-Resistance, Rds(on):0.3ohm; Package/Case:3-TO-220; Continuous Drain Current - 100 Deg C:7.5A; Continuous Drain Current - 25 Deg C:10.5A 或非
MOSFET-PWR 800V 4A 或非
NOR GATE 或非
MOSFET-PWR 500V 8A
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| HCS05DMSR FN3557 HCS05MS HCS05D HCS05HMSR HCS05K H |
Inverter, Hex, Open Drain, Rad-Hard, High-Speed, CMOS, Logic
From old datasheet system
JFET-N-CHANNEL SWITCH
Radiation Hardened Hex Inverter with Open Drain HC/UH SERIES, HEX 1-INPUT INVERT GATE, UUC14
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage Drain Current Min, Idss:50mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Current Rating:50mA; Voltage Rating:30V
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
HARRIS SEMICONDUCTOR
|
| FDZ1905PZ |
Common Drain P-Channel 1.5V PowerTrench? WL-CSP MOSFET -20V -3A, 123mΩ
Common Drain P-Channel 1.5V PowerTrench㈢ WL-CSP MOSFET -20V -3A, 123mヘ
|
Fairchild Semiconductor
|
| ULS2822J ULS2822L ULS2025L ULS2025J ULS2003J ULS20 |
Single buffer (open drain)
Single 2-input open drain NAND gate
ST72E311/ST72T311 - 8-BIT MCU WITH 8 TO 16K OTP/EPROM, 384 TO 512 BYTES RAM, ADC, WDG, SCI, SPI AND 2 TIMERS
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES 逻辑IC
Single 2-input AND gate 单两输入与门
Single exclusive OR gate
EMI FILTER WITH ESD PROTECTION - (ASD)
LNB supply and control voltage regulator (parallel interface)
N - channel 100 V - 0.33 " - 2 A - SOT-223 STripFET™ Power MOSFET
Single 2-input OR gate
Single 2-input NAND gate
TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE
Single bus buffer (3-state)
Single inverter (open drain)
Single Schmitt inverter
ST72101/ST72212/ST72213 - 8-BIT MCU WITH 4 TO 8K ROM/OTP/EPROM, 256 BYTES RAM, ADC, WDG, SPI AND 1 OR 2 TIMERS
|
|
| SP8830 SP8830ADG SP8830BDG DES9157201 DES9157201AC |
1.5GHz ÷ 10 Prescaler
1.5GHz 10 Prescaler
1.5GHz ± 10 Prescaler
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:13A; On-Resistance, Rds(on):15mohm; Rds(on) Test
|
Mitel Semiconductor
MITEL[Mitel Networks Corporation]
|
| STQ1NK60ZR-AP STQ1NK60ZR STD1LNK60Z-1 STN1NK60Z |
N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET N沟道600V3欧姆0.8A TO-92/IPAK/SOT-223齐纳MOSFET的保护SuperMESH
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
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