| PART |
Description |
Maker |
| APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
| APT36N90BC3G |
Super Junction MOSFET
Power MOSFET; Package: TO-247 [B]; ID (A): 36; RDS(on) (Ohms): 0.12; BVDSS (V): 900; 36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi Corporation
Microsemi, Corp.
|
| TMP93C071 E_030331_93C071_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
From old datasheet system
|
Toshiba
|
| TMP93PW20A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TMP93CS45 TMP93CS44 |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TMP93PW46A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TMP95FW54A |
16-Bit Microcontroller TLCS-900 Family: 900/H Series
|
Toshiba
|
| MRF9100R3 MRF9100 MRF9100SR3 |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| CM900DU-24NF |
Mega Power Dual??IGBTMOD 900 Amperes/1200 Volts
Mega Power Dual IGBTMOD 900 Amperes/1200 Volts
Mega Power Dual⑩ IGBTMOD 900 Amperes/1200 Volts
Mega Power Dual?/a> IGBTMOD 900 Amperes/1200 Volts
|
POWEREX INC
POWEREX[Powerex Power Semiconductors]
|
| STEVAL-ISA105V1 |
Power supply for energy meter and power line modem based on the ALTAIR04-900
|
ST Microelectronics
|
| STH5NA90FI |
3.5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
STMICROELECTRONICS
|
| IRFB20STRRPBF IRFB20SPBF |
1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
