| PART |
Description |
Maker |
| 2SC3295 |
High hFE: hFE = 600 3600. High voltage: VCEO = 50 V. High voltage: VCEO = 50 V.
|
TY Semiconductor Co., L...
|
| 2SA1400-Z |
High Voltage: VCEO=-400V High speed:tr 1.0ìs Collector to Base Voltage VCBO -400 V
|
TY Semiconductor Co., Ltd
|
| 2SA1412-Z |
High Voltage: VCEO=-400V High speed:tr 0.7ìs Collector to Base Voltage VCBO -400 V
|
TY Semiconductor Co., Ltd
|
| CSC2611 |
1.250W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.100A Ic, 30 - 200 hFE.
HIGH VOLTAGE AMPLIFIER AND TV VIDEO OUTPUT
|
Continental Device India Limited
|
| 2SC1653 |
High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA) High voltage VCEO : 130V
|
TY Semiconductor Co., Ltd
|
| 2SC2383 |
High voltage VCEO 160V
|
Tiger Electronic Co.,Lt...
|
| 2SC4102 |
High breakdown voltage.(VCEO = 120V)
|
TY Semiconductor Co., Ltd
|
| SMLA42CSM |
SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE
Silicon NPN High Voltage Transistor In Ceramic Surface Mount (Vcbo:300V,Vceo:300V,Vebo:6V)(N沟道增强高电压功率MOS场效应管(Vcbo:300V,Vceo:300V,Vebo:6V)) 高压硅npn型晶体管在陶瓷表面贴装（Vcbo00V，Vceo00V，Vebo6V的）（不适用沟道增强型，高电压功率马鞍山场效应管（Vcbo00V，Vceo00V，Vebo6V的）
|
SemeLAB
SEME-LAB[Seme LAB]
Motorola Mobility Holdings, Inc.
|
| 2SA1807 A5800342 2SA1807TLN 2SA1862TLP 2SA1807TLP |
High-Voltage Switching Transistor (Telephone, Power Supply) (-600V, -1A)
High-Voltage Switching Transistor (Telephone power supply) (-600V, -1A)
From old datasheet system
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 2A I(C) | TO-252VAR
TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 1A I(C) | TO-252VAR 晶体管|晶体管|进步党| 600V的五（巴西）总裁| 1A条一（c）|52VAR
|
ROHM[Rohm]
Rohm Co., Ltd.
|
| 1206GA150JAT1A 1808AA105JA11A 1808GC223JA11A 1808H |
CAP 15PF 2000V 5% NP0(C0G) SMD-1206 TR-7 PLATED-NI/SN CAPACITOR, CERAMIC, MULTILAYER, 2000 V, C0G, 0.000015 uF, SURFACE MOUNT, 1206
High Voltage MLC Chips For 600V to 5000V Application
High Voltage MLC Chips For 600V to 5000V Application
|
AVX, Corp.
AVX Corporation
|
| 2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
