| PART |
Description |
Maker |
| SFT1014 |
100 amp HIGH ENERGY NPN TRANSISTORS 100 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3
|
Solid State Devices, Inc.
|
| MJE1300906 MJE13009G MJE13009 |
SWITCHMODE Series NPN Silicon Power Transistors(开关模式系列NPN硅功率晶体管) 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
|
ONSEMI[ON Semiconductor]
|
| PDTC115E PDTC115EE PDTC115EEF PDTC115EK PDTC115EM |
NPN resistor-equipped transistors; R1 = 100 kohm, R2 = 100 kohm 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BSW66 BSW66-JQR-AR1 |
2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-205AD
Bipolar NPN Device in a Hermetically sealed TO39
|
SEMELAB LTD
Seme LAB
|
| 2N6536 2N6536.MOD |
8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-213AA
Bipolar NPN Device in a Hermetically sealed TO66
|
SEMELAB LTD
Seme LAB
|
| TIP102 |
NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt ResistorNPN硅外延达林顿晶体管（内置基极-射极分流电阻单片结构 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| MJF122 MJE122 ON2045 MJF127 MF122 MJE127 |
COMPLEMENTARY SILICON POWER DARLINGTONS 5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| KTD2059R KTD2059-15 |
5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
TRIPLE DIFFUSED NPN TRANSISTOR
|
KEC(Korea Electronics)
|
| FZT853TA |
6 A, 100 V, NPN, Si, POWER TRANSISTOR
|
Diodes, Inc.
|
| BD645 BD649 |
8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220
|
POWER INNOVATIONS LTD
|
| TIP122-6226 |
8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Intersil, Corp.
|
| MRF421 |
100 W, 30 MHz, RF power transistor NPN silicon
The RF Line NPN Silicon RF Power Transistor
|
MA-Com
MACOM[Tyco Electronics]
|
|
