| PART |
Description |
Maker |
| BAS85 |
Low forward voltage High breakdown voltage Guard ring protected
|
TY Semiconductor Co., Ltd
|
| SD103AWS |
Low Forward Voltage Drop Guard Ring Construction for Transient protection
|
SHIKE Electronics
|
| 1N60 |
Low forward voltage drop. Guard ring construction for transient protection.
|
TY Semiconductor Co., Ltd
|
| BAT74S |
Low forward voltage Guard ring protected Small SMD package.
|
TY Semiconductor Co., Ltd
|
| BAT64-04W BAT64-05W BAT64-06W BAT64W BAT64-W Q6270 |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring)
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
Silicon Schottky Diodes (For low-loss fast-recovery meter protection bias isolation and clamping applications Integrated diffused guard ring)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| Q62705-K151 KPY33-R |
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105 相对硅压阻压力传感器
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
Silicon Piezoresistive Relative Pressure Sensor
Silicon Piezoresistive Relative Press...
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| 20KDA10 |
Miniature Size, Low Forward Voltage drop
Low Forward Voltage drop Diode
Miniature Size / Low Forward Voltage drop
|
NIEC[Nihon Inter Electronics Corporation]
|
| BAT54A215 BAT54C.215 |
Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
|
NXP Semiconductors
|
| 2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| LFTVS18-1F3 |
Low forward voltage TransiTM, transient voltage suppressor
|
STMicroelectronics
|
