| PART |
Description |
Maker |
| PUMA2F16006M-90 PUMA2F16006-90 PUMA2F16006M-120E P |
32-Tap, Volatile DPP with I2C/DEC, Up/Down Interface, TSSOP
BGA, ROHS-A, IND TEMP, T&R(ARM)
BGA,GREEN,IND TEMP,T&R(ARM)
x32 Flash EEPROM Module X32号，闪存EEPROM模块
EEPROM EEPROM
|
Infineon Technologies AG
Amphenol Tuchel
|
| HYRDU64164M-80M HYRDU72184M-80M HYRDU72184M-60M |
4M X 16 RAMBUS, PBGA66 MICRO, BGA-66
4M X 18 RAMBUS, PBGA74 MICRO, BGA-74
|
Hynix Semiconductor, Inc.
|
| FDZ293P06 FDZ293P |
P-Channel 2.5 V Specified PowerTrench? BGA MOSFET
P-Channel 2.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDZ206P |
P-Channel 2.5V Specified PowerTrench BGA MOSFET
From old datasheet system
P-Channel 2.5V Specified PowerTrench® BGA MOSFET
|
Fairchild Semiconductor
|
| IBM25PPC740L-GB375A2T IBM25PPC740L-GB375A2R IBM25P |
MICROPROCESSOR|32-BIT|CMOS|BGA|360PIN|CERAMIC
MICROPROCESSOR|32-BIT|CMOS|BGA|255PIN|CERAMIC 微处理器| 32位|的CMOS | BGA封装| 255PIN |陶瓷
|
Glenair, Inc.
Vishay Semiconductors
|
| PC48F4400P0VT00A RC48F4400P0VT00A |
32M X 16 FLASH 1.8V PROM, 88 ns, PBGA64 LEAD FREE, BGA-64
32M X 16 FLASH 1.8V PROM, 88 ns, PBGA64 BGA-64
|
Intel, Corp.
|
| FDZ2553NZ |
Monolithic Common Drainl N-Channel 2.5V Specified PowerTrench BGA MOSFET
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| EPM7512AEBC256-10 EPM7256AEFC100-10 |
COMPLEX-EEPLD,512-CELL,10NS PROP DELAY,BGA,256PIN,PLASTIC
COMPLEX-EEPLD,256-CELL,10NS PROP DELAY,BGA,100PIN,PLASTIC
|
Altera Corp
|
| K7P323688M-HC250 K7P323688M-GC250 |
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANCE, BGA-119
|
TOKO, Inc.
|
| FW80321M600Q467 FW80321M400Q466 |
600 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
400 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
|
Intel, Corp.
|
| K7P401823B-HC650 K7P401823B-HC750 K7P403623B |
256K X 18 STANDARD SRAM, 6.5 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 7.5 ns, PBGA119 14 X 22 MM, BGA-119
128Kx36 & 256Kx18 SRAM
|
Samsung semiconductor
|
|
